260A 40V N CHANNEL MOSFET KIA Semicon Tech KCT1704A for Battery Management Systems and Motor Control
Key Attributes
Model Number:
KCT1704A
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
260A
RDS(on):
1.6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
1.45nF
Number:
1 N-channel
Output Capacitance(Coss):
1.5nF
Pd - Power Dissipation:
164W
Input Capacitance(Ciss):
8.2nF
Gate Charge(Qg):
210nC@10V
Mfr. Part #:
KCT1704A
Package:
TOLL-8
Product Description
Product Overview
The KIA SEMICONDUCTORS KCT1704A is a 260A, 40V N-CHANNEL MOSFET utilizing advanced SGT technology and proprietary High Density Trench Technology. It offers low on-state resistance and is designed for applications such as Battery Management Systems, Load Switches, and Brushless DC Motor Control. This device is RoHS Compliant and Halogen-Free.
Product Attributes
- Brand: KIA
- Part Number: KCT1704A
- Package: TOLL-8
- Certifications: RoHS Compliant & Halogen-Free
Technical Specifications
| Parameter | Symbol | Test Condition | Ratings | Unit |
| Drain-to-Source Voltage | VDS | 40 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | TC=25 °C, VGS@10V | 260 | A |
| TC=100 °C, VGS@10V | 169 | A | ||
| Pulsed Drain Current | IDM | 1052 | A | |
| Power Dissipation | PD | TC=25 °C | 164 | W |
| TC=100 °C | 2.55 | W | ||
| Single Pulsed Avalanche Energy | EAS | 551 | mJ | |
| Junction & Storage Temperature Range | TJ& TSTG | -55 to 150 | °C | |
| Thermal Resistance, Junction-case | RθJC | 1) | 0.76 | °C/W |
| Junction-to-Ambient | RθJA | (mounted on 1 inch square PCB) | 49 | °C/W |
| Drain-source breakdown voltage | BVDSS | VGS=0V, ID=250uA | 40 | V |
| Zero gate voltage drain current | IDSS | VDS=40V,VGS=0V | - | 1 μA |
| Zero gate voltage drain current | IDSS | VDS=40V, TC=55°C | - | 100 μA |
| Gate-source leakage current | IGSS | VGS=±20V,VDS=0V | - | ±100 nA |
| Gate threshold voltage | VGS(th ) | VDS=VGS,ID=250uA | 1.0 - 2.4 | V |
| Drain-source on-state resistance | RDS(on) | VGS=10V, ID=60A | - 1.1 1.6 | mΩ |
| VGS=4.5V, ID=20A | - 1.43 - | mΩ | ||
| Transconductance | gfs | VDS=5V,ID=50A | - 225 - | S |
| Input Capacitance | Ciss | VGS=0V, VDS=20V, f=100KHz | - 8200 - | pF |
| Output Capacitance | Coss | - 1500 - | pF | |
| Reverse Transfer Capacitance | Crss | - 1450 - | pF | |
| Gate Total Charge | Qg | VGS=10V, VDS=20V, ID=50A | - 210 - | nC |
| Gate-Source charge | Qgs | - 22 - | ||
| Gate-Drain charge | Qg | - 75 - | ||
| Turn-on delay time | td(on) | VDD=20V, ID=50A, VGS=10V, RG=5Ω | - 50 - | ns |
| Rise time | tr | - 175 - | ||
| Turn-off delay time | td(off) | - 300 - | ||
| Fall time | tf | - 250 - | ||
| Gate resistance | RG | - 0.7 - | Ω | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 1),5) | - 188 - | A |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 2),5) | - 1052 - | A |
| Body Diode Forward Voltage | VSD | 2) VGS=0V, IS=50A TJ=25°C | - 0.78 - | V |
Notes:
1) The data tested by surface mounted on one inch2 FR-4 board with 2OZ copper.
2) The data tested by pulsed, pulse width≤300us, duty cycle≤2%.
3) The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, Rg=25Ω, L=0.1mH, IAS=104.98A.
4) The power dissipation is limited by 150°C junction temperature.
5) The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2411121110_KIA-Semicon-Tech-KCT1704A_C41369544.pdf
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