Schottky Barrier Diode KUU MBR1045DS with 31.5 Volt RMS Reverse Voltage and 2 Watt Power Dissipation
Key Attributes
Model Number:
MBR1045DS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Reverse Leakage Current (Ir):
100uA
Voltage - DC Reverse (Vr) (Max):
45V
Pd - Power Dissipation:
2W
Voltage - Forward(Vf@If):
840mV@10A
Current - Rectified:
10A
Mfr. Part #:
MBR1045DS
Package:
TO-252
Product Description
Product Overview
The MBR1045DS is a Schottky Barrier Diode featuring guard ring die construction for transient protection, low power loss, high efficiency, and high surge capability. It is designed for use in low voltage, high frequency inverters, free-wheeling, and polarity protection applications. This product meets ROHS and Green Product requirements with full function reliability approved.
Product Attributes
- Certifications: ROHS, Green Product
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit | |
| Peak repetitive reverse voltage | VRRM | TA=25C | 45 | V | |
| Working peak reverse voltage | VRWM | TA=25C | 45 | V | |
| DC blocking voltage | VR | TA=25C | 45 | V | |
| RMS reverse voltage | VR(RMS) | TA=25C | 31.5 | V | |
| Average rectified output current | IO | TA=25C | 10 | A | |
| Non-Repetitive peak forward surge current | IFSM | 8.3ms half sine wave, TA=25C | 150 | A | |
| Power dissipation | PD | TA=25C | 2 | W | |
| Junction temperature | Tj | TA=25C | 150 | C | |
| Storage temperature | Tstg | TA=25C | -55~+150 | C | |
| Thermal Resistance from Junction to Ambient | RJA | TA=25C | 100 | C/W | |
| Thermal Resistance From Junction To Case | RJC | TA=25C | 5 | C/W | |
| Reverse voltage | V(BR) | IR=0.1mA | 45 | V | |
| Reverse current | IR | VR=45V, Tj=25 | 0.1 | mA | |
| Forward voltage | VF1 | IF=3A, Tj=25 | 0.47 | V | |
| Forward voltage | VF2 | IF=5A, Tj=25 | 0.60 | 0.7 | V |
| Forward voltage | VF3 | IF=10A, Tj=25 | 0.84 | V |
2411121110_KUU-MBR1045DS_C41366939.pdf
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