7A 600V N Channel Power MOSFET KIA Semicon Tech KNF4660A Ideal for High Voltage Switching Circuits
Key Attributes
Model Number:
KNF4660A
Product Custom Attributes
Configuration:
Half-Bridge
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.25Ω@10V,3.5A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.12nF
Output Capacitance(Coss):
90pF
Pd - Power Dissipation:
42W
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
KNF4660A
Package:
TO-220F-3
Product Description
Product Overview
The KNX4660A is a 7A, 600V N-Channel enhancement mode silicon gate power MOSFET designed for high voltage, high speed power switching applications. Its features include low gate charge for minimized switching loss and a fast recovery body diode, making it suitable for applications such as high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topology. It is commonly used in adaptors, chargers, and SMPS standby power.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KNX4660A
- Package: TO-220F
- Certifications: ROHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings (TC=25 unless otherwise specified) | ||||||
| Drain-to-Source Voltage | VDSS | 600 | V | |||
| Gate-to-Source Voltage | VGSS | ±30 | V | |||
| Continuous Drain Current | ID | 7.0 | A | |||
| Pulsed Drain Current | IDM | VGS=10V | 28 | A | ||
| Single Pulse Avalanche Energy | EAS | 550 | mJ | |||
| Power Dissipation | PD | 42 | W | |||
| Derating Factor above 25 C | 0.34 | W/ C | ||||
| Maximum Temperature for Soldering (Leads at 0.063in from Case for 10s) | TL | 300 | C | |||
| Maximum Temperature for Soldering (Package Body for 10s) | TPAK | 260 | C | |||
| Operating and Storage Temperature Range | TJ & TSTG | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| Thermal resistance, junction-ambient | RJA | 100 | C/W | |||
| Thermal resistance, Junction-case | RJC | 2.98 | C/W | |||
| Electrical Characteristics (TJ=25C, unless otherwise notes) | ||||||
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250A | 600 | - | - | V |
| Drain-to-source Leakage Current | IDSS | VDS=600 ,VGS=0V | - | - | 1 | A |
| Drain-to-source Leakage Current | IDSS | VDS=480, VGS=0V TJ=125C | - | - | 100 | A |
| Gate-body leakage current | IGSS | VGS=30V,VDS=0V | - | - | +100 | nA |
| Gate-body leakage current | IGSS | VGS=-30V,VDS=0V | - | - | -100 | nA |
| Static drain-source on-resistance | RDS(on) | VGS=10V,ID=3.5A | - | 1.0 | 1.25 | |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 2.0 | - | 4.0 | V |
| Forward Transconductance | gfs | VDS=30V,ID=3.5A | - | 11 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V,VGS=0V, f=1MHz | - | 1120 | - | pF |
| Output capacitance | Coss | VDS=25V,VGS=0V, f=1MHz | - | 90 | - | pF |
| Reverse transfer capacitance | Crss | VDS=25V,VGS=0V, f=1MHz | - | 10 | - | pF |
| Total gate charge | Qg | VDD=300V,ID=7A , VGS=0 to10V | - | 19 | - | nC |
| Turn-on delay time | td(on) | VDD=300,ID=7A, VGS=10V,RG=4.7 | - | 10 | - | ns |
| Rise time | tr | VDD=300,ID=7A, VGS=10V,RG=4.7 | - | 11 | - | ns |
| Turn-off delay time | td(off) | VDD=300,ID=7A, VGS=10V,RG=4.7 | - | 17 | - | ns |
| Fall time | tf | VDD=300,ID=7A, VGS=10V,RG=4.7 | - | 10 | - | ns |
| Gate-source charge | Qgs | VDD=300V,ID=7A , VGS=0 to10V | - | 5 | - | nC |
| Gate-drain charge | Qg d | VDD=300V,ID=7A , VGS=0 to10V | - | 5 | - | nC |
| Drain-source diode characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS=0V,Is=7A | - | - | 1.5 | V |
| Continuous drain-source current | ISD | - | - | 7.0 | A | |
| Pulsed drain-source current | ISM | - | - | 28 | A | |
| Reverse recovery time | trr | VGS=0V,IF=7A dlSD/dt=100A/s | - | 349 | - | ns |
| Reverse recovery charge | Qrr | VGS=0V,IF=7A dlSD/dt=100A/s | - | 1.0 | - | C |
2411121021_KIA-Semicon-Tech-KNF4660A_C176850.pdf
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