NPN transistor KTP SS8050 in SOT23 package designed for various general purpose electronic functions

Key Attributes
Model Number: SS8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
-
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
SS8050
Package:
SOT-23
Product Description

Product Overview

The SS8050 is an NPN transistor in a SOT-23 package, designed for general-purpose amplification and switching applications. It is the complementary part to the SS8550 transistor.

Product Attributes

  • Brand: KTP Semiconductor
  • Package: SOT-23
  • Material: Plastic-Encapsulated
  • Complementary Part: SS8550

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC = 100A, IE=040V
Collector-emitter breakdown voltageV(BR)CEOIC = 0.1mA, IB=025V
Emitter-base breakdown voltageV(BR)EBOIE =100A, IC=05V
Collector cut-off currentICBOCB V =40V, IE=00.1A
Collector cut-off currentICEOCE V =20V, IE=00.1A
Emitter cut-off currentIEBOEB V = 5V, IC=00.1A
DC current gainhFE(1)CE V =1V, IC= 100mA120400
DC current gainhFE(2)CE V =1V, IC= 800mA40
Collector-emitter saturation voltageVCE(sat)CI =800mA, IB= 80mA0.5V
Base-emitter saturation voltageVBE(sat)CI =800mA, IB= 80mA1.2V
Transition frequencyfTVCE=10V, IC= 50mA, f=30MHz100MHz
Collector-Base VoltageVCBO40V
Collector-Emitter VoltageVCEO25V
Emitter-Base VoltageVEBO5V
Collector CurrentIC1.5A
Collector Power DissipationPC300mW
Thermal Resistance From Junction To AmbientRJA417/W
Operation Junction and Storage Temperature RangeTJ,Tstg-55+150

2412191542_KTP-SS8050_C42417224.pdf

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