Compact SOT 723 Package N Channel Enhancement Mode MOSFET KUU KM3134K for Power Management Solutions
Key Attributes
Model Number:
KM3134K
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
RDS(on):
330mΩ@4.5V,0.65A
Operating Temperature -:
-55℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF@16V
Number:
1 N-channel
Input Capacitance(Ciss):
79pF@16V
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
1nC@4.5V
Mfr. Part #:
KM3134K
Package:
SOT-723
Product Description
N-Channel Enhancement Mode MOSFET
This N-Channel Enhancement Mode MOSFET features advanced trench process technology, offering a low threshold voltage and fast switching speed. It is designed for load switching in portable devices and as a voltage-controlled small signal switch. The device is Halogen-Free & Lead-Free, with low RDS(on) for efficient switching.
Product Attributes
- Brand: KM3134K
- Package: SOT-723
- Marking: KF
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDS | 20 | V | |
| Gate-Source Voltage | VGS | ±12 | V | |
| Continuous Drain Current | ID | 0.75 | A | |
| Peak Drain Current, Pulsed | IDM | 1.8 | A | 1) Pulse width ≤100us, duty cycle ≤1%, limited by Tjmax. |
| Power Dissipation | Ptot | 0.15 | W | 2) Device mounted on FR-4 substrate PC board, 2ozcopper, with 1-inch square copper plate in still air. |
| Operating Junction Temperature | TJ | -55~150 | ||
| Storage Temperature Range | Tstg | -55~150 | ||
| Thermal Characteristics | ||||
| Thermal Resistance from Junction to Ambient | RθJA | 833 | /W | 2) Device mounted on FR-4 substrate PC board, 2ozcopper, with 1-inch square copper plate in still air. |
| Static Parameters | ||||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | at ID = 250 µA |
| Drain-Source Leakage Current | IDSS | 1 | µA | at VDS = 20 V, VGS = 0 V |
| Gate Leakage Current | IGSS | ±10 | µA | at VGS = ± 10 V, VDS = 0 V |
| Gate-Source Threshold Voltage | VGS(th) | 0.35 - 1.1 | V | at VDS = VGS, ID = 250 µA |
| Drain-Source On-State Resistance | RDS(on) | 170 - 330 | mΩ | at VGS = 4.5 V, ID = 0.65 A |
| 230 - 400 | mΩ | at VGS = 2.5 V, ID = 0.45 A | ||
| 350 - 750 | mΩ | at VGS = 1.8 V, ID = 0.25 A | ||
| Dynamic Parameters | ||||
| Forward Transconductance | gfs | 1.6 | S | at VDS = 10 V, ID = 800mA |
| Input Capacitance | Ciss | 79 | pF | at VGS = 0 V, VDS = 16 V, f = 1 MHz |
| Output Capacitance | Coss | 13 | pF | at VGS = 0 V, VDS = 16 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | 9 | pF | at VGS = 0 V, VDS = 16 V, f = 1 MHz |
| Gate charge total | Qg | 1 | nC | at VDS =10 V, ID =0.9 A, VGS =4.5 V |
| Gate to Source Charge | Qgs | 0.28 | nC | at VDS =10 V, ID =0.9 A, VGS =4.5 V |
| Gate to Drain Charge | Qgd | 0.22 | nC | at VDS =10 V, ID =0.9 A, VGS =4.5 V |
| Turn-On Delay Time | td(on) | 6.7 | nS | at VGS = 4.5 V, VDS = 10 V, ID = 0.5 A, Rg = 10 Ω |
| Turn-On Rise Time | tr | 4.8 | nS | at VGS = 4.5 V, VDS = 10 V, ID = 0.5 A, Rg = 10 Ω |
| Turn-Off Delay Time | td(off) | 17.3 | nS | at VGS = 4.5 V, VDS = 10 V, ID = 0.5 A, Rg = 10 Ω |
| Turn-Off Fall Time | tf | 7.4 | nS | at VGS = 4.5 V, VDS = 10 V, ID = 0.5 A, Rg = 10 Ω |
| Body-Diode Parameters | ||||
| Drain-Source Diode Forward Voltage | VDS | 1.2 | V | at IS = 150 mA, VGS = 0 V |
| Body Diode Reverse Recovery Time | trr | 7.5 | nS | at IF = 3.6 A, di/dt = 100 A / µs |
| Body Diode Reverse Recovery Charge | Qrr | 2.5 | nC | at IF = 3.6 A, di/dt = 100 A / µs |
2410121245_KUU-KM3134K_C5438456.pdf
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