High Density Cell Structure P Channel MOSFET KUU AOD403 for Battery and Load Switching Solutions
Key Attributes
Model Number:
AOD403
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
60A
RDS(on):
13mΩ@4.5V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
266pF
Input Capacitance(Ciss):
1.988nF
Pd - Power Dissipation:
110W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
AOD403
Package:
TO-252
Product Description
Product Overview
The AOD403 is a P-Channel MOSFET designed with a high-density cell structure for ultra-low RDS(ON). It offers fully characterized avalanche voltage and current, along with good stability and uniformity. This MOSFET is suitable for battery and loading switching applications and features an excellent package for good heat dissipation.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Breakdown Voltage | BV(BR)DSS | VGS=0VID=-250A | -30 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-30VVGS=0V | -- | -- | -1.0 | uA |
| Gate-Body Leakage Current | IGSS | VGS=20VVDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGSID=-250A | -1.0 | -1.5 | -2.2 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=-10V ID=-15A | -- | 8.5 | 10 | m |
| Drain-Source On-State Resistance | RDS(on) | VGS=-4.5VID=-8A | -- | 9.5 | 13 | m |
| Input Capacitance | CISS | VDS=-15VVGS=0V f=1MHz | -- | 1988 | -- | pF |
| Output Capacitance | COSS | VDS=-15VVGS=0V f=1MHz | -- | 305 | -- | pF |
| Reverse Transfer Capacitance | CRSS | VDS=-15VVGS=0V f=1MHz | -- | 266 | -- | pF |
| Total Gate Charge | Qg | -- | -- | 35 | -- | nC |
| Gate Source Charge | Qgs | -- | -- | 5.8 | -- | nC |
| Gate Drain Charge | Qgd | -- | -- | 8.8 | -- | nC |
| Turn-on Delay Time | td(on) | -- | -- | 11 | -- | nS |
| Turn-on Rise Time | tr | -- | -- | 7.7 | -- | nS |
| Turn-Off Delay Time | td(off) | -- | -- | 43.3 | -- | nS |
| Turn-Off Fall Time | tf | -- | -- | 18 | -- | nS |
| Forward on voltage | VSD | Tj=25Is=-12A | -- | -- | -1.2 | V |
| Common Ratings | ||||||
| Gate-Source Voltage | VGS | TC=25C Unless Otherwise Noted | -- | -- | 20 | V |
| Continuous Drain Current | ID | Tc=25C | -- | -- | -60 | A |
| Pulse Drain Current | IDM | Tc=25C | -- | -- | -210 | A |
| Diode Continuous Forward Current | IS | Tc=25C, Mounted on Large Heat Sink | -- | -- | -60 | A |
| Single pulse avalanche energy | EAS | -- | -- | 77 | -- | mJ |
| Storage Temperature Range | TJ,TSTG | -- | -55 | -- | 175 | C |
| Maximum Power Dissipation | PD | TA=25unless otherwise noted | -- | -- | 40 | W |
| Thermal Resistance Junction-Ambient | RJA | (*1 in2 Pad of 2-oz Copper), Max. | -- | 62.5 | -- | C/W |
2410161003_KUU-AOD403_C41432293.pdf
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