High density cell design N Channel MOSFET KUU K3080K offering good heat dissipation and uniformity

Key Attributes
Model Number: K3080K
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
RDS(on):
10mΩ@5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
235pF
Output Capacitance(Coss):
250pF
Input Capacitance(Ciss):
2.015nF
Pd - Power Dissipation:
83W
Gate Charge(Qg):
61nC@10V
Mfr. Part #:
K3080K
Package:
TO-252
Product Description

Product Overview

The K3080K is a high-performance N-Channel MOSFET featuring a high-density cell design for ultra-low RDS(ON). It offers fully characterized avalanche voltage and current with good stability and uniformity, making it suitable for load switching, hard switched and high frequency circuits, and uninterruptible power supplies. The excellent package design ensures good heat dissipation.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolConditionMinTypMaxUnit
Absolute Maximum RatingsVDS30V
VGS20V
TJ150C
Common RatingsTSTG-50155C
PDTc=25C, Mounted on Large Heat Sink83W
Electrical CharacteristicsBV(BR)DSSVGS=0VID=250A30----V
IDSSVDS=30VVGS=0V----1uA
IGSSVGS=20VVDS=0V----100nA
Static Electrical CharacteristicsVGS(th)VDS=VGSID=250A11.63V
RDS(on)VGS=10VID=30A--4.76.5m
Dynamic Electrical CharacteristicsRDS(on)VGS=5VID=24A--7.310m
CISSVDS=15VVGS=0V f=1MHz--2015--pF
Switching CharacteristicsCOSSVDS=15VVGS=0V f=1MHz--250--pF
CRSSVDS=15VVGS=0V f=1MHz--235--pF
QgVDD=10VID=30A VGS=10VRG=2.7--61--nC
Source-Drain Diode CharacteristicsQgs--8.3--nC
Qgd--7.5--nC
td(on)--21--nS
tr--16--nS
td(off)--59--nS
tf--10.3--nS
VSDTj=25Is=24A----1.2V

2412301735_KUU-K3080K_C42429361.pdf
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