High density cell design N Channel MOSFET KUU K3080K offering good heat dissipation and uniformity
Product Overview
The K3080K is a high-performance N-Channel MOSFET featuring a high-density cell design for ultra-low RDS(ON). It offers fully characterized avalanche voltage and current with good stability and uniformity, making it suitable for load switching, hard switched and high frequency circuits, and uninterruptible power supplies. The excellent package design ensures good heat dissipation.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | VDS | 30 | V | |||
| VGS | 20 | V | ||||
| TJ | 150 | C | ||||
| Common Ratings | TSTG | -50 | 155 | C | ||
| PD | Tc=25C, Mounted on Large Heat Sink | 83 | W | |||
| Electrical Characteristics | BV(BR)DSS | VGS=0VID=250A | 30 | -- | -- | V |
| IDSS | VDS=30VVGS=0V | -- | -- | 1 | uA | |
| IGSS | VGS=20VVDS=0V | -- | -- | 100 | nA | |
| Static Electrical Characteristics | VGS(th) | VDS=VGSID=250A | 1 | 1.6 | 3 | V |
| RDS(on) | VGS=10VID=30A | -- | 4.7 | 6.5 | m | |
| Dynamic Electrical Characteristics | RDS(on) | VGS=5VID=24A | -- | 7.3 | 10 | m |
| CISS | VDS=15VVGS=0V f=1MHz | -- | 2015 | -- | pF | |
| Switching Characteristics | COSS | VDS=15VVGS=0V f=1MHz | -- | 250 | -- | pF |
| CRSS | VDS=15VVGS=0V f=1MHz | -- | 235 | -- | pF | |
| Qg | VDD=10VID=30A VGS=10VRG=2.7 | -- | 61 | -- | nC | |
| Source-Drain Diode Characteristics | Qgs | -- | 8.3 | -- | nC | |
| Qgd | -- | 7.5 | -- | nC | ||
| td(on) | -- | 21 | -- | nS | ||
| tr | -- | 16 | -- | nS | ||
| td(off) | -- | 59 | -- | nS | ||
| tf | -- | 10.3 | -- | nS | ||
| VSD | Tj=25Is=24A | -- | -- | 1.2 | V |
2412301735_KUU-K3080K_C42429361.pdf
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