Low Gate Threshold Voltage Power MOSFET KUU AO3416 with 20V Drain Source Voltage and ESD Protection
Key Attributes
Model Number:
AO3416
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.5A
Operating Temperature -:
-
RDS(on):
30mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
146pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
1.16nF@10V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
AO3416
Package:
SOT-23
Product Description
Product Overview
The AO3416 is an N-Channel Power MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge. It operates with gate voltages as low as 1.8V, making it suitable for load switch and PWM applications. This device is ESD protected with a 2000V HBM rating.
Product Attributes
- Brand: Yongyutai (inferred from website URL)
- Origin: China (inferred from website URL)
- Certifications: ESD Protected (2000V HBM)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | VGS = 0V, ID =250A | 20 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS =VGS, ID =250A | 0.4 | 1 | V | |
| Gate-Body Leakage | IGSS | VDS =0V, VGS =8V | 10 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =20V, VGS =0V | 1 | A | ||
| Drain-Source On-Resistance | RDS(on) | VGS =4.5V, ID = 1A | 16 | 22 | m | |
| VGS =2.5V, ID = 1A | 19 | 26 | m | |||
| VGS =1.8V, ID = 1A | 23 | 30 | m | |||
| Forward Transconductance | gfs | VDS =4.5V, ID = 6.5A | 29 | S | ||
| Diode Forward Voltage | VSD | IS= 1A,VGS=0V | 0.8 | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | 2.5 | A | |||
| Input Capacitance | Ciss | VDS =10V, VGS =0V, f=1MHz | 1160 | pF | ||
| Output Capacitance | Coss | VDS =10V, VGS =0V, f=1MHz | 187 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V, VGS =0V, f=1MHz | 146 | pF | ||
| Gate Resistance | Rg | f =1MHz | 1.5 | |||
| Switching Parameters | td(on) | VGS=10V, VDS=10V RL=2.6, RGEN=3 | 6.2 | ns | ||
| tr | VGS=10V, VDS=10V RL=2.6, RGEN=3 | 12.7 | ns | |||
| Switching Parameters | td(off) | VGS=10V, VDS=10V RL=2.6, RGEN=3 | 51.7 | ns | ||
| tf | VGS=10V, VDS=10V RL=2.6, RGEN=3 | 16 | ns | |||
| Total Gate Charge | Qg | VDS =10V,VGS =10V, ID =6.5A | 16 | nC | ||
| Gate-Source Charge | Qgs | VDS =10V,VGS =10V, ID =6.5A | 0.8 | nC | ||
| Gate-Drain Charge | Qgd | VDS =10V,VGS =10V, ID =6.5A | 3.8 | nC | ||
| Body Diode Reverse Recovery Time | trr | IF= 6.5A, dI/dt=100A/s | 17.7 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF= 6.5A, dI/dt=100A/s | 6.7 | nC |
2410122000_KUU-AO3416_C20616231.pdf
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