Low RDS ON MOSFET KUU KSI2324DS T1 GE3 Featuring TrenchFET Power Technology and Pb Free Certification
Key Attributes
Model Number:
KSI2324DS-T1-GE3
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.2A
RDS(on):
87mΩ@1.8V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
44pF
Number:
1 N-channel
Output Capacitance(Coss):
66pF
Input Capacitance(Ciss):
436pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
6.2nC@4.5V
Mfr. Part #:
KSI2324DS-T1-GE3
Package:
SOT-23
Product Description
Product Overview
The N-Channel 20-V (D-S) MOSFET utilizes advanced TrenchFET Power MOSFET technology to deliver excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 1.8V. This device is well-suited for load switch or PWM applications. The standard product MK3414 is Pb-free, complying with ROHS & Sony 259 specifications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Pb-free (ROHS & Sony 259 specifications)
- Marking: AE9T
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Static Drain-Source On-Resistance | RDS(on) | VGS = 4.5V, ID = 4.2A | 41 | 50 | mΩ | |
| VGS = 2.5V, ID = 3.6A | 52 | 63 | mΩ | |||
| VGS = 1.8V, ID = 3A | 67 | 87 | mΩ | |||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Continuous Drain Current | ID | 4.2 | A | |||
| Pulsed Diode Current | IDM | 15 | A | |||
| Continuous Source-Drain Current(Diode Conduction) | IS | 2 | A | |||
| Power Dissipation | PD | 1.4 | W | |||
| Operating Junction Temperature | TJ | -55 | +150 | ℃ | ||
| Storage Temperature | TSTG | -55 | +150 | ℃ | ||
| Electrical Characteristics | ||||||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 20 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID = 250µA | 0.4 | 1.4 | V | |
| Gate-body leakage current | IGSS | VDS =0V, VGS = ±8V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS = 20V, VGS =0V | 1 | µA | ||
| Forward transconductance | gfs | VDS = 5V, ID = 4.2A | 11 | S | ||
| Diode forward voltage | VSD | IS= 1A,VGS=0V | 0.8 | 1 | V | |
| Maximum Body-Diode Continuous Current | IS | 2 | A | |||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS = 10V, VGS =0V, f=1MHz | 436 | pF | ||
| Output capacitance | Coss | VDS = 10V, VGS =0V, f=1MHz | 66 | pF | ||
| Reverse transfer capacitance | Crss | VDS = 10V, VGS =0V, f=1MHz | 44 | pF | ||
| Total gate charge | Qg | VDS = 10V, VGS = 4.5V, ID = 4.2A | 6.2 | nC | ||
| Gate-source charge | Qgs | VDS = 10V, VGS = 4.5V, ID = 4.2A | 1.6 | nC | ||
| Gate-drain charge | Qg | VDS = 10V, VGS = 4.5V, ID = 4.2A | 0.5 | nC | ||
| Gate resistance | Rg | f=1MHz | 3 | Ω | ||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VDS= 10V RL= 2.7Ω, ID = 4.2A, VGS= 5V,Rg= 6Ω | 5.5 | ns | ||
| Rise time | tr | VDS= 10V RL= 2.7Ω, ID = 4.2A, VGS= 5V,Rg= 6Ω | 6.3 | ns | ||
| Turn-off delay time | td(off) | VDS= 10V RL= 2.7Ω, ID = 4.2A, VGS= 5V,Rg= 6Ω | 40 | ns | ||
| Fall time | tf | VDS= 10V RL= 2.7Ω, ID = 4.2A, VGS= 5V,Rg= 6Ω | 12.7 | ns | ||
| Body Diode Characteristics | ||||||
| Body Diode Reverse Recovery Time | Trr | IF= 4A, dI/dt=100A/µs | 12.3 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF= 4A, dI/dt=100A/µs | 3.5 | nC | ||
2410121912_KUU-KSI2324DS-T1-GE3_C2892535.pdf
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