Power Management MOSFET Leiditech FDMS86163P P Channel with 100V Drain Source Voltage and Low On Resistance
Key Attributes
Model Number:
FDMS86163P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
50A
RDS(on):
52mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF
Number:
1 P-Channel
Output Capacitance(Coss):
194pF
Pd - Power Dissipation:
140W
Input Capacitance(Ciss):
2.12nF
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
FDMS86163P
Package:
DFN-8(4.9x5.7)
Product Description
Product Overview
The FDMS86163P is a P-Channel Enhancement Mode MOSFET designed for various applications. It features a -100V Drain-Source Voltage and a continuous drain current capability of -50A at 25 (VGS @ -10V). This MOSFET offers a low static drain-source on-resistance (RDS(on)) of 40m typically at VGS=-10V and ID=-20A, making it suitable for power management applications.
Product Attributes
- Brand: Leiditech
- Model: FDMS86163P
- Type: P-Channel Enhancement Mode MOSFET
- Origin: Shanghai Leiditech Electronic Co.,Ltd
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units | |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | |||||||
| VDS | Drain-Source Voltage | -100 | V | ||||
| VGS | Gate-Source Voltage | 20 | V | ||||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1 | -50 | A | ||||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1 | -28 | A | ||||
| IDM | Pulsed Drain Current2 | -150 | A | ||||
| EAS | Single Pulse Avalanche Energy3 | 87 | mJ | ||||
| IAS | Avalanche Current | -35 | A | ||||
| PD@TC=25 | Total Power Dissipation4 | 140 | W | ||||
| TSTG | Storage Temperature Range | -55 | 150 | ||||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||||
| RJA | Thermal Resistance Junction-Ambient | 125 | /W | ||||
| RJC | Thermal Resistance Junction-Case1 | 1.1 | /W | ||||
| Electrical Characteristics (TJ =25 , unless otherwise noted) | |||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250A | -100 | - | - | V | |
| IDSS | Zero Gate Voltage Drain Current | VDS=-100V, VGS=0V | - | - | -1.0 | A | |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= 20V | - | - | 100 | nA | |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=-250A | -1.0 | -1.6 | -2.5 | V | |
| RDS(on) | Static Drain-Source on-Resistance | VGS=-10V, ID=-20A | - | 40 | 52 | m | |
| RDS(on) | Static Drain-Source on-Resistance | VGS=-4.5V, ID=-10A | - | 44 | 62 | m | |
| Ciss | Input Capacitance | VDS=-50V, VGS=0V, f=1.0MHz | - | 2120 | - | pF | |
| Coss | Output Capacitance | - | 194 | - | pF | ||
| Crss | Reverse Transfer Capacitance | - | 13 | - | pF | ||
| Qg | Total Gate Charge | VDS=-50V, ID=-5A, VGS=-10V | - | 40 | - | nC | |
| Qgs | Gate-Source Charge | - | 7.8 | - | nC | ||
| Qgd | Gate-Drain(Miller) Charge | - | 8.6 | - | nC | ||
| td(on) | Turn-on Delay Time | VDD=-50V, ID=-5A, RG=6, VGS=-10V | - | 13 | - | ns | |
| tr | Turn-on Rise Time | - | 39 | - | ns | ||
| td(off) | Turn-off Delay Time | - | 100.1 | - | ns | ||
| tf | Turn-off Fall Time | - | 105.3 | - | ns | ||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | -35 | A | ||
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | -140 | A | ||
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=-30A | - | - | -1.2 | V | |
| trr | Body Diode Reverse Recovery Time | TJ=25, IF=-5A,dI/dt=100A/s | - | 104 | - | ns | |
| Qrr | Body Diode Reverse Recovery Charge | - | 280 | - | nC | ||
| Package Mechanical Data-DFN5*6-8L | |||||||
| Symbol | Common | mm | Inch | Min | Max | Min | Max |
| A | 1.03 | 1.17 | 0.0406 | 0.0461 | |||
| b | 0.34 | 0.48 | 0.0134 | 0.0189 | |||
| c | 0.824 | 0.0970 | 0.0324 | 0.082 | |||
| D | 4.80 | 5.40 | 0.1890 | 0.2126 | |||
| D1 | 4.11 | 4.31 | 0.1618 | 0.1697 | |||
| D2 | 4.80 | 5.00 | 0.1890 | 0.1969 | |||
| E | 5.95 | 6.15 | 0.2343 | 0.2421 | |||
| E1 | 5.65 | 5.85 | 0.2224 | 0.2303 | |||
| E2 | 1.60 | / | 0.0630 | / | |||
| e | BSC | 1.27 | BSC | 0.05 | BSC | ||
| L | 0.05 | 0.25 | 0.0020 | 0.0098 | |||
| L1 | 0.38 | 0.50 | 0.0150 | 0.0197 | |||
| L2 | 0.38 | 0.50 | 0.0150 | 0.0197 | |||
| H | 3.30 | 3.50 | 0.1299 | 0.1378 | |||
| I | / | 0.18 | / | 0.0070 | |||
Notes:
1. Data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
2. Data tested by pulsed, pulse width 300s, duty cycle 2%.
3. EAS data shows Max. rating. Test condition is V DD =-25V, V GS =-10V, L=0.1mH, IAS =-24A.
4. Power dissipation is limited by 150 junction temperature.
5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2410121549_Leiditech-FDMS86163P_C3647072.pdf
Related Products
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
