86--136 6733 2386
quality load switching with Leiditech PMV37ENEA 60V N Channel Enhancement Mode MOSFET and low gate charge factory
quality load switching with Leiditech PMV37ENEA 60V N Channel Enhancement Mode MOSFET and low gate charge factory

load switching with Leiditech PMV37ENEA 60V N Channel Enhancement Mode MOSFET and low gate charge

Key Attributes
Model Number: PMV37ENEA
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
RDS(on):
100mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 N-channel
Input Capacitance(Ciss):
715pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
7nC@4.5V
Mfr. Part #:
PMV37ENEA
Package:
SOT-23
Product Description

Product Overview

The 60V N-Channel Enhancement Mode MOSFET utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for applications such as battery protection, load switching, and uninterruptible power supplies. Key features include a VDS of 60V, ID of 3A, and RDS(ON) < 100m @ VGS=10V.

Product Attributes

  • Brand: Leiditech
  • Model: PMV37ENEA
  • Technology: Advanced Trench Technology
  • Package Type: SOT-23
  • Description: N-Channel Enhancement Mode MOSFET

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current, VGS @ 10V1 ID@TA=25 3.0 A
Continuous Drain Current, VGS @ 10V1 ID@TA=70 1.8 A
Pulsed Drain Current2 IDM 9.2 A
Total Power Dissipation3 PD@TA=25 1 W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Thermal Resistance Junction-Ambient1 RJA 125 /W
Thermal Resistance Junction-Case1 RJC 80 /W
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 60 V
BVDSS Temperature Coefficient BVDSS/TJ Reference to 25 , ID=1mA 0.054 V/
Static Drain-Source On-Resistance2 RDS(ON) VGS=10V , ID=2A 80 100 m
Static Drain-Source On-Resistance2 RDS(ON) VGS=4.5V , ID=1A 85 110 m
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.2 2.5 V
VGS(th) Temperature Coefficient VGS(th)/TJ -4.96 mV/
Drain-Source Leakage Current IDSS VDS=48V , VGS=0V , TJ=25 1 uA
Drain-Source Leakage Current IDSS VDS=48V , VGS=0V , TJ=55 5 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Forward Transconductance gfs VDS=5V , ID=2A 13 S
Total Gate Charge (4.5V) Qg VDS=48V , VGS=4.5V , ID=2A 5 7.0 nC
Gate-Source Charge Qgs 1.68 2.4
Gate-Drain Charge Qgd 1.9 2.7
Turn-On Delay Time td(on) VDD=30V , VGS=10V , RG=3.3 , ID=2A 1.6 3.2 ns
Rise Time tr 7.2 13
Turn-Off Delay Time td(off) 25 50
Fall Time tf 14.4 28.8
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz 511 715 pF
Output Capacitance Coss VDS=15V , VGS=0V , f=1MHz 38 53 pF
Reverse Transfer Capacitance Crss VDS=15V , VGS=0V , f=1MHz 25 35 pF
Continuous Source Current1,4 IS VG=VD=0V , Force Current 2.3 A
Pulsed Source Current2,4 ISM 9.2 A
Diode Forward Voltage2 VSD VGS=0V , IS=1A , TJ=25 1.2 V
Reverse Recovery Time trr IF=2A , dI/dt=100A/s , TJ=25 9.7 nS
Reverse Recovery Charge Qrr IF=2A , dI/dt=100A/s , TJ=25 5.8 nC
Symbol Dimensions in Millimeters MIN. MAX.
A 0.900 1.150
A1 0.000 0.100
A2 0.900 1.050
b 0.300 0.500
c 0.080 0.150
D 2.800 3.000
E 1.200 1.400
E1 2.250 2.550
e 0.950TYP
e1 1.800 2.000
L 0.550REF
L1 0.300 0.500
0 8

Package Marking and Ordering Information:

  • Device Marking: PMV37ENEA
  • Package: SOT-23
  • Reel Size: 7 inch
  • Tape width: 8mm
  • Quantity: 3000 units

2410121618_Leiditech-PMV37ENEA_C3647059.pdf
Related Products
quality DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability factory
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
quality Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications factory
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
quality Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature factory
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
quality RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW factory
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.