Low Gate Charge 60V N Channel MOSFET Leiditech DMN6075SQ with Excellent RDS ON and Trench Technology
Key Attributes
Model Number:
DMN6075SQ
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
RDS(on):
100mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 N-channel
Input Capacitance(Ciss):
715pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
7nC@4.5V
Mfr. Part #:
DMN6075SQ
Package:
SOT-23
Product Description
Product Overview
The DMN6075SQ is a 60V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications, providing reliable performance in demanding environments.
Product Attributes
- Brand: Leiditech
- Model: DMN6075SQ
- Package Type: SOT-23
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 3.0 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 1.8 | A | |||
| IDM | Pulsed Drain Current2 | 9.2 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient1 | 125 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 80 | /W | |||
| Electrical Characteristics (TJ=25, unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.054 | --- | V/ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=2A | 80 | 100 | m | |
| VGS=4.5V , ID=1A | 85 | 110 | V | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | -4.96 | --- | mV/ | ||
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=48V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=2A | 13 | --- | S | |
| Qg | Total Gate Charge (4.5V) | VDS=48V , VGS=4.5V , ID=2A | 5 | 7.0 | nC | |
| Qgs | Gate-Source Charge | 1.68 | 2.4 | nC | ||
| Qgd | Gate-Drain Charge | 1.9 | 2.7 | nC | ||
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3 , ID=2A | 1.6 | 3.2 | ns | |
| Tr | Rise Time | 7.2 | 13 | ns | ||
| Td(off) | Turn-Off Delay Time | 25 | 50 | ns | ||
| Tf | Fall Time | 14.4 | 28.8 | ns | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 511 | 715 | pF | |
| Coss | Output Capacitance | 38 | 53 | pF | ||
| Crss | Reverse Transfer Capacitance | 25 | 35 | pF | ||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | 2.3 | A | |
| ISM | Pulsed Source Current2,4 | --- | 9.2 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
| trr | Reverse Recovery Time | IF=2A , dI/dt=100A/s , TJ=25 | 9.7 | --- | nS | |
| Qrr | Reverse Recovery Charge | 5.8 | --- | nC | ||
| Dimensions (SOT-23) | ||||||
| Symbol | Dimensions in Millimeters | MIN. | MAX. | |||
| A | 0.900 | 1.150 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 0.900 | 1.050 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.080 | 0.150 | ||||
| D | 2.800 | 3.000 | ||||
| E | 1.200 | 1.400 | ||||
| E1 | 2.250 | 2.550 | ||||
| e | 0.950TYP | |||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.550REF | |||||
| L1 | 0.300 | 0.500 | ||||
| 0 | 8 | |||||
Notes:
- 1 The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
- 2 The data tested by pulsed, pulse width 300us, duty cycle 2%.
- 3 The power dissipation is limited by 150 junction temperature.
- 4 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121618_Leiditech-DMN6075SQ_C3647060.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
