Durable 20V P Channel MOSFET Leiditech IRLML6402 designed for battery protection and power switching
Key Attributes
Model Number:
IRLML6402
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
RDS(on):
185mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
34pF@10V
Input Capacitance(Ciss):
290pF@10V
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
3nC@4.5V
Mfr. Part #:
IRLML6402
Package:
SOT-23
Product Description
Product Overview
The IRLML6402 is a 20V P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as low as 2.5V. This device is well-suited for applications such as battery protection and load switching, as well as uninterruptible power supplies. Its design provides efficient performance in switching applications.
Product Attributes
- Brand: Leiditech
- Device Marking: IRLML6402
- Package: SOT-23
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | -20 | V | |||
| VGS (Gate-Source Voltage) | 12 | V | |||
| ID (Drain Current-Continuous) | -2.3 | A | |||
| IDM (Drain Current - Pulsed) (Note 1) | -10 | A | |||
| PD (Maximum Power Dissipation) | (TC=25) | 0.7 | W | ||
| TJ,TSTG (Operating Junction and Storage Temperature Range) | -55 | 150 | |||
| RJA (Thermal Resistance, Junction-to-Ambient) (Note 2) | 178 | /W | |||
| BVDSS (Drain-Source Breakdown Voltage) | VGS=0V, ID=-250A | -20 | V | ||
| IDSS (Zero Gate Voltage Drain Current) | VDS=-20V,VGS=0V | -1 | A | ||
| IGSS (Gate-Body Leakage Current) | VGS=12V,VDS=0V | 100 | nA | ||
| VGS(th) (Gate Threshold Voltage) | VDS=VGS,ID=-250A | -0.5 | -0.7 | -1.2 | V |
| RDS(ON) (Drain-Source On-State Resistance) | VGS=-4.5V, ID=-2 A | 135 | 165 | m | |
| RDS(ON) (Drain-Source On-State Resistance) | VGS=-2.5V, ID=-1.8A | 150 | 185 | m | |
| gFS (Forward Transconductance) | VDS=-5V,ID=-2A | 4 | S | ||
| Ciss (Input Capacitance) | VDS=-10V,VGS=0V, F=1.0MHz | 290 | PF | ||
| Coss (Output Capacitance) | 60 | PF | |||
| Crss (Reverse Transfer Capacitance) | 34 | PF | |||
| td(on) (Turn-on Delay Time) | VDD=-10V, RL=5, VGS=- 4.5V,RGEN=3 | 10 | nS | ||
| tr (Turn-on Rise Time) | 5.0 | nS | |||
| td(off) (Turn-Off Delay Time) | 21 | nS | |||
| tf (Turn-Off Fall Time) | 7 | nS | |||
| Qg (Total Gate Charge) | VDS=-10V,ID=-2A, VGS=-4.5V | 3.0 | nC | ||
| Qgs (Gate-Source Charge) | 0.5 | nC | |||
| Qgd (Gate-Drain Charge) | 0.8 | nC | |||
| VSD (Diode Forward Voltage) (Note 3) | VGS=0V,IS=-2A | -1.2 | V | ||
| Package Reel Size | SOT-23 | 180mm | |||
| Package Tape width | SOT-23 | 8 mm | |||
| Package Quantity | SOT-23 | 3000 units |
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
4. Guaranteed by design, not subject to production.
2207041730_Leiditech-IRLML6402_C3647031.pdf
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