Power MOSFET KUU 15N10 Featuring Low RDS ON and High Power Handling for Battery Switch Applications
Key Attributes
Model Number:
15N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
RDS(on):
151mΩ@2.0V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
90pF
Number:
1 N-channel
Output Capacitance(Coss):
120pF
Pd - Power Dissipation:
30W
Input Capacitance(Ciss):
690pF
Gate Charge(Qg):
15.5nC@10V
Mfr. Part #:
15N10
Package:
TO-252
Product Description
Product Description
The 15N10 N-Channel Enhancement Mode Power MOSFET utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. Its high power and current handling capability make it suitable for battery protection and other switching applications, including battery switches and DC/DC converters. This lead-free product offers reliable performance in a surface mount package.
Product Attributes
- Brand: CJ-ELE
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (TA=25 unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGS | (TA=25 unless otherwise noted) | 20 | V | ||
| Drain Current-Continuous | ID | (TC=25) | 15 | A | ||
| Drain Current-Continuous | ID | (TC=100C) | 10.0 | A | ||
| Drain Current-Pulsed (Note 1) | IDM | 36 | A | |||
| Maximum Power Dissipation | PD | (TC=25C) | 30 | W | ||
| Maximum Power Dissipation | PD | (TC=100C) | 15 | W | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To | 175 | ||
| Thermal Resistance,Junction-to-Case (Note 2) | RJC | 5 | /W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 100 | 107 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1.2 | 1.8 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=10A (Note 3) | 0.120 | 0.130 | 0.136 | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=8A (Note 3) | 0.140 | 0.151 | - | |
| Forward Transconductance | gFS | VDS=25V,ID=10A | - | - | 3.5 | S |
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Clss | VDS=25V, VGS=0V, F=1.0MHz | - | 690 | - | PF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, F=1.0MHz | - | 120 | - | PF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, F=1.0MHz | - | 90 | - | PF |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=30V,ID=2A,RL=15 VGS=10V,RG=2.5 | - | 11 | - | nS |
| Turn-on Rise Time | tr | VDD=30V,ID=2A,RL=15 VGS=10V,RG=2.5 | - | 7.4 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=30V,ID=2A,RL=15 VGS=10V,RG=2.5 | - | 35 | - | nS |
| Turn-Off Fall Time | tf | VDD=30V,ID=2A,RL=15 VGS=10V,RG=2.5 | - | 9.1 | - | nS |
| Total Gate Charge | Qg | VDS=30V,ID=3A, VGS=10V | - | 15.5 | - | nC |
| Gate-Source Charge | Qgs | VDS=30V,ID=3A, VGS=10V | - | 3.2 | - | nC |
| Gate-Drain Charge | Qg | VDS=30V,ID=3A, VGS=10V | - | 4.7 | - | nC |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage (Note 3) | VSD | VGS=0V,IS=9.6A | - | - | 1.2 | V |
| Diode Forward Current (Note 2) | IS | - | - | 12 | A | |
| Reverse Recovery Time | trr | TJ = 25C, IF =9.6A di/dt = 100A/s(Note3) | - | 21 | - | nS |
| Reverse Recovery Charge | Qrr | TJ = 25C, IF =9.6A di/dt = 100A/s(Note3) | - | 97 | - | nC |
2410121739_KUU-15N10_C2939004.pdf
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