High Density Cell Design N Channel MOSFET KUU BSS138AF7 with Pb Free Lead Plating and UL 94 V0 Rating
Key Attributes
Model Number:
BSS138AF7
Product Custom Attributes
Mfr. Part #:
BSS138AF7
Package:
SOT-723
Product Description
Product Overview
The BSS138AF7 is an N-Channel MOSFET featuring a high-density cell design for low RDS(ON) and extremely low threshold voltage. It offers ESD protection and meets UL 94 V-0 flammability rating, making it a rugged and reliable component for various applications.
Product Attributes
- Flammability Rating: UL 94 V-0
- Device Marking Code: BSS138AF7 SS
- Package Type: SOT723
- Lead Plating: Pb free solder
- Lead Frame: CAC-5
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
| Maximum Ratings (Ta = 25 ) | ||||||
| VDS | Drain-Source Voltage | 50 | V | |||
| VGS | Continuous Gate-Source Voltage | 20 | V | |||
| ID | Continuous Drain Current | 0.22 | A | |||
| PD | Total Power Dissipation | 0.35 | W | |||
| TJ | Junction Temperature | 150 | ||||
| TSTG | Storage Temperature | -55 | 150 | |||
| RJA | Thermal Resistance from Junction to Ambient | 362 | /W | |||
| Electrical Characteristics (Ta = 25 ) | ||||||
| V(BR)Dss | Drain-source Voltage Breakdown Voltage | VGS=0V,ID=250uA | 50 | V | ||
| VGS(th) | Gate-Threshold Voltage (note 1) | VDS=VGS,ID=250uA | 0.8 | 1.0 | 1.45 | V |
| IGSS | Gate body Leakage | VDS=0V,VGS=20V | 10 | uA | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=48V,VGS=0V | 1 | uA | ||
| RDSON | Drain-source On-resistance (note 1) | VGS=10V,ID=0.5A | 1.1 | 1.3 | ||
| VGS=4.5V,ID=0.2A | 3 | 4 | ||||
| VSD | Diode Forward Voltage (note 1) | VGS=0V,Is=0.5A | 0.5 | 1.3 | V | |
| gFS | Forward Transconductance (note 1) | VGS=10V,IS=200mA | 100 | mS | ||
| Dynamic Characteristics (note 1) | ||||||
| Ciss | Input Capacitance | VDS=25V,VGS=0V,f=1MHz | 22.8 | pF | ||
| Coss | Output Capacitance | 3.5 | pF | |||
| Crss | Reverse Transfer Capacitance | 2.9 | pF | |||
| Switching Time (note 1) | ||||||
| Td(on) | Turn on Delay time | VDD=30V,VDS=10V,ID=0.5A,RGEN=25,RL=60 | 3.8 | ns | ||
| Td(off) | Turn off Delay time | 19 | ns | |||
2509261615_KUU-BSS138AF7_C52016444.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
