30V N Channel MOSFET Leiditech SQ2348ES Featuring Low Gate Charge and Enhanced Trench Technology
Key Attributes
Model Number:
SQ2348ES
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
RDS(on):
38mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
33pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
233pF@15V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
3nC@10V
Mfr. Part #:
SQ2348ES
Package:
SOT-23
Product Description
Product Overview
The SQ2348ES is a 30V N-Channel Enhancement Mode MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This device is well-suited for applications such as lithium battery protection, wireless impact, and mobile phone fast charging.
Product Attributes
- Brand: Leiditech
- Model: SQ2348ES
- Package Type: SOT-23
- Origin: Shanghai Leiditech Electronic Co.,Ltd
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGSS | Gate-Source Voltage | ±20 | V | |||
| ID@TA=25 | Continuous Drain Current | 4.2 | A | |||
| ID@TA=70 | Continuous Drain Current | 2.6 | A | |||
| IDM | Pulsed Drain Current | 16 | A | |||
| PD | Power Dissipation TA = 25 | 1 | W | |||
| RJA | Thermal Resistance, Junction to Ambient | 125 | /W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +150 | |||
| Electrical Characteristics (TJ=25, unless otherwise noted) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 30 | 32 | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=30V, VGS=0V | - | - | 1.0 | μA |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS=±20V | - | - | ±100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250μA | 1.2 | 1.5 | 2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance note2 | VGS=10V, ID=4A | - | 29 | 38 | mΩ |
| VGS=4.5V, ID=3A | - | 45 | 65 | mΩ | ||
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1.0MHz | - | 233 | - | pF |
| Coss | Output Capacitance | - | 44 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 33 | - | pF | |
| Qg | Total Gate Charge | VDS=15V, ID=2A, VGS=10V | - | 3 | - | nC |
| Qgs | Gate-Source Charge | - | 0.5 | - | nC | |
| Qgd | Gate-Drain(Miller) Charge | - | 0.8 | - | nC | |
| td(on) | Turn-on Delay Time | VDS=15V, ID=4A, RGEN=3Ω, VGS=10V | - | 4 | - | ns |
| tr | Turn-on Rise Time | - | 2.1 | - | ns | |
| td(off) | Turn-off Delay Time | - | 15 | - | ns | |
| tf | Turn-off Fall Time | - | 3.2 | - | ns | |
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 4 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 16 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=4A | - | - | 1.2 | V |
| Package Dimensions (SOT-23) | ||||||
| Symbol | Dimensions in Millimeters | MIN. | MAX. | |||
| A | 0.900 | 1.150 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 0.900 | 1.050 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.080 | 0.150 | ||||
| D | 2.800 | 3.000 | ||||
| E | 1.200 | 1.400 | ||||
| E1 | 2.250 | 2.550 | ||||
| e | 0.950TYP | |||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.550REF | |||||
| L1 | 0.300 | 0.500 | ||||
| θ | 0° | 8° | ||||
Ordering Information:
| Device Marking | Device Package | Reel Size | Tape width | Quantity |
|---|---|---|---|---|
| 3404B | SOT-23 | Ø180mm | 8 mm | 3000 units |
2410121536_Leiditech-SQ2348ES_C3647052.pdf
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