Low gate charge and excellent RDS ON performance in Leiditech LM-2N7002 60V N-Channel MOSFET device
Key Attributes
Model Number:
LM-2N7002
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.9V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
3nC@4.5V
Mfr. Part #:
LM-2N7002
Package:
SOT-23-3
Product Description
Product Overview
The LM-2N7002 is a 60V N-Channel Enhancement Mode MOSFET designed with advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for applications such as battery protection, load switching, and uninterruptible power supplies, providing reliable switching performance.
Product Attributes
- Brand: Leiditech
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Features | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Continuous Drain Current (TA =25) | ID | 0.3 | A | |||
| RDS(ON) | VGS=10V | 1 | 2 | |||
| ESD Rating (HBM) | 2000 | V | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (TC=25) | 60 | V | ||
| Gate-Source Voltage | VGS | (TC=25) | 20 | V | ||
| Continuous Drain Current (TJ =150) TA =25 | ID | 0.3 | A | |||
| Continuous Drain Current (TJ =150) TA =100 | ID | 0.19 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | 0.8 | A | |||
| Maximum Power Dissipation | PD | 0.35 | W | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To | 150 | ||
| Thermal Resistance,Junction-to-Ambient (Note 2) | RJA | 350 | /W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | 68 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=10V,VDS=0V | - | 100 | 500 | nA |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | 4 | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.7 | 1.2 | 1.9 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=5V, ID=0.4A | - | 1.3 | 3 | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=0.5A | - | 1 | 2 | |
| Forward Transconductance | gFS | VDS=10V,ID=0.2A | 0.1 | - | - | S |
| Input Capacitance | Clss | VDS=25V,VGS=0V, F=1.0MHz | - | 21 | 50 | PF |
| Output Capacitance | Coss | VDS=25V,VGS=0V, F=1.0MHz | - | 11 | 25 | PF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, F=1.0MHz | - | 4.2 | 5 | PF |
| Turn-on Delay Time | td(on) | VDD=30V,ID=0.2A VGS=10V,RGEN=10 | - | 10 | - | nS |
| Turn-on Rise Time | tr | VDD=30V,ID=0.2A VGS=10V,RGEN=10 | - | 50 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=30V,ID=0.2A VGS=10V,RGEN=10 | - | 17 | - | nS |
| Turn-Off Fall Time | tf | VDD=30V,ID=0.2A VGS=10V,RGEN=10 | - | 10 | - | nS |
| Total Gate Charge | Qg | VDS=10V,ID=0.3A, VGS=4.5V | - | 1.7 | 3 | nC |
| Diode Forward Voltage (Note 3) | VSD | VGS=0V,IS=0.2A | - | - | 1.2 | V |
| Diode Forward Current (Note 2) | IS | - | - | 0.3 | A | |
| Package Marking and Ordering Information | ||||||
| Device Marking | 72K | |||||
| Device | LM-2N7002 | |||||
| Package | SOT-23 | |||||
| Reel Size | 180mm | |||||
| Tape width | 8 mm | |||||
| Quantity | 3000 units | |||||
| Dimensions SOT-23 | ||||||
| Symbol | Dimensions in Millimeters | MIN. | MAX. | |||
| A | 0.900 | 1.150 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 0.900 | 1.050 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.080 | 0.150 | ||||
| D | 2.800 | 3.000 | ||||
| E | 1.200 | 1.400 | ||||
| E1 | 2.250 | 2.550 | ||||
| e | 0.950TYP | |||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.550REF | |||||
| L1 | 0.300 | 0.500 | ||||
| 0 | 8 | |||||
2412311540_Leiditech-LM-2N7002_C42431732.pdf
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