N Channel MOSFET KUU 10N03F 30 Volt SOT89 Enhancement Mode Transistor for Electronic Applications

Key Attributes
Model Number: 10N03F
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
RDS(on):
11mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
70pF
Output Capacitance(Coss):
125pF
Input Capacitance(Ciss):
750pF
Pd - Power Dissipation:
3W
Gate Charge(Qg):
15nC@4.5V
Mfr. Part #:
10N03F
Package:
SOT-89
Product Description

Product Overview

This is a SOT-89 30V N Channel Enhancement Mode Field Effect Transistor (MOSFET). It is designed for various electronic applications requiring efficient switching and amplification.

Product Attributes

  • Brand: Yongyutai (implied by website)
  • Model: 10N03F
  • Type: N-Channel MOSFET
  • Package: SOT-89

Technical Specifications

CharacteristicSymbolMinTypMaxUnitNotes
Drain-Source VoltageBVDSS30V(ID =250uA,VGS=0V)
Gate Threshold VoltageVGS(th)11.52.4V(ID =250uA,VGS= VDS)
Zero Gate Voltage Drain CurrentIDSS1uA(VGS=0V, VDS= 30V)
Gate Body LeakageIGSS+100nA(VGS=+20V, VDS=0V)
Static Drain-Source On-State ResistanceRDS(ON)1118m(ID=5A,VGS=10V)
(ID=3A,VGS=4.5V)
Diode Forward Voltage DropVSD1.2V(ISD=5A,VGS=0V)
Input CapacitanceCISS750pF(VGS=0V, VDS=15V,f=1MHz)
Common Source Output CapacitanceCOSS125pF(VGS=0V, VDS=15V,f=1MHz)
Reverse Transfer CapacitanceCRSS70pF(VGS=0V, VDS=15V,f=1MHz)
Total Gate ChargeQg15nC(VDS=15V, ID=8A, VGS=4.5V)
Gate Source ChargeQgs2.5nC(VDS=15V, ID=8A, VGS=4.5V)
Gate Drain ChargeQgd3nC(VDS=15V, ID=8A, VGS=4.5V)
Turn-ON Delay Timetd(on)4.5ns(VDS=15V ID=1A, RGEN=3,VGS=10V)
Turn-ON Rise Timetr10ns(VDS=15V ID=1A, RGEN=3,VGS=10V)
Turn-OFF Delay Timetd(off)18ns(VDS=15V ID=1A, RGEN=3,VGS=10V)
Turn-OFF Fall Timetf6ns(VDS=15V ID=1A, RGEN=3,VGS=10V)

Absolute Maximum Ratings

CharacteristicSymbolRatingUnit
Drain-Source VoltageBVDSS30V
Gate- Source VoltageVGS+20V
Drain Current (continuous)IDat TA = 25C10A
Drain Current (pulsed)IDM50A
Total Device DissipationPD(at TA = 25C)3000mW
Thermal Resistance Junction-AmbientRJA42/W
Junction/Storage TemperatureTJ,Tstg-55~150

Dimension

SymbolDimensions In MillimetersDimensions In Inches
MinMaxMinMax
A1.401.600.0550.063
B0.400.560.0160.022
B10.350.480.0140.019
C0.350.440.0140.017
D4.404.600.1730.181
D11.351.830.0530.072
e1.451.550.0570.061
e12.953.050.1160.120
E2.292.600.0900.102
H3.754.250.1480.167
L0.801.200.0310.047

2504101957_KUU-10N03F_C46635131.pdf

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