Power MOSFET KUU 20N06 Featuring 60V VDS and 20A Continuous Current for Power Switching Solutions
Key Attributes
Model Number:
20N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
24mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
58.8pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
973.2pF@30V
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
20N06
Package:
TO-252
Product Description
Product Overview
This N-Channel Enhancement Mode Power MOSFET features an ultra-low Rds(on) due to its high-density cell design, making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. It offers a VDS of 60V and ID of 20A, with excellent package design for heat dissipation and high ESD capability.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| General Features | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Drain Current-Continuous | ID | 20 | A | |||
| Drain Current-Continuous (TC=100) | ID (100) | 14 | A | |||
| Pulsed Drain Current | IDM | 60 | A | |||
| Maximum Power Dissipation | PD | 45 | W | |||
| Single pulse avalanche energy (Note 5) | EAS | 72 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Resistance, Junction-to-Case (Note 2) | RJC | Surface Mounted on FR4 Board, t 10 sec | 3.3 | /W | ||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| On Characteristics (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.2 | 1.6 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=10A | 19 | 24 | m | |
| VGS=4.5V, ID=10A | 24 | 35 | ||||
| Forward Transconductance | gFS | VDS=5V, ID=10A | 11 | S | ||
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Clss | 973.2 | PF | |||
| Output Capacitance | Coss | 61.2 | PF | |||
| Reverse Transfer Capacitance | Crss | VDS=30V, VGS=0V, F=1.0MHz | 58.8 | PF | ||
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, RL=3, VGS=10V, RG=3 | 7 | nS | ||
| Turn-on Rise Time | tr | VDD=30V, RL=3, VGS=10V, RG=3 | 20 | nS | ||
| Turn-Off Delay Time | td(off) | VDD=30V, RL=3, VGS=10V, RG=3 | 16 | nS | ||
| Turn-Off Fall Time | tf | VDD=30V, RL=3, VGS=10V, RG=3 | 23 | nS | ||
| Total Gate Charge | Qg | VDS=30V, ID=10A, VGS=10V | 25 | nC | ||
| Gate-Source Charge | Qgs | VDS=30V, ID=10A, VGS=10V | 4.5 | nC | ||
| Gate-Drain Charge | Qg | VDS=30V, ID=10A, VGS=10V | 6.5 | nC | ||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage (Note 3) | VSD | VGS=0V, IS=10A | 1.2 | V | ||
| Diode Forward Current (Note 2) | IS | 20 | A | |||
| Reverse Recovery Time | trr | TJ = 25C, IF =10A, di/dt = 100A/s(Note3) | 29 | nS | ||
| Reverse Recovery Charge | Qrr | TJ = 25C, IF =10A, di/dt = 100A/s(Note3) | 49 | nC | ||
2410121919_KUU-20N06_C7424668.pdf
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