20V N Channel MOSFET Leiditech SE2312 featuring low gate charge for fast charging and wireless impact
Key Attributes
Model Number:
SE2312
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.8A
RDS(on):
21mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
80pF@10V
Input Capacitance(Ciss):
780pF@10V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
SE2312
Package:
SOT-23
Product Description
Product Overview
The SE2312 is a 20V N-Channel Enhancement Mode MOSFET that utilizes advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is well-suited for battery protection and other switching applications, including lithium battery protection, wireless impact, and mobile phone fast charging.Product Attributes
- Brand: Leiditech
- Model: SE2312
- Package Type: SOT-23
- Device Marking: AE9T
- Ordering Information: SE2312
- Reel Size: 180mm
- Tape Width: 8 mm
- Quantity per Reel: 3000 units
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | |||||
| Drain-Source Voltage (VDS) | 20 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | |||
| Continuous Drain Current (ID@TA=25) | 6.8 | A | |||
| Continuous Drain Current (ID@TA=70) | 6.0 | A | |||
| Pulsed Drain Current (IDM) | 2 | 30 | A | ||
| Total Power Dissipation (PD@TA=25) | 3 | 1.5 | W | ||
| Storage Temperature Range (TSTG) | -55 | 150 | |||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||
| Thermal Resistance Junction-ambient (RJA) | 1 | 83 | /W | ||
| Electrical Characteristics (TJ=25, unless otherwise noted) | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250A | 20 | 22 | V | |
| Gate Threshold Voltage (VGS(th)) | VDS= VGS, ID=250A | 0.50 | 0.65 | 1.0 | V |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V, ID=4A | 16 | 21 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=2.5V, ID=3A | 20 | 30 | m | |
| Zero Gate Voltage Drain Current (IDSS) | VDS=20V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current (IGSS) | VGS=10V, VDS=0V | 100 | nA | ||
| Input Capacitance (Ciss) | VDS=10V,VGS=0V,f=1MHZ | 780 | pF | ||
| Output Capacitance (Coss) | 140 | pF | |||
| Reverse Transfer Capacitance (Crss) | 80 | pF | |||
| Total Gate Charge (Qg) | VGS=4.5V,VDS=10V,ID=6.8A | 11 | nC | ||
| Gate-Source Charge (Qgs) | 2.3 | nC | |||
| Gate-Drain Charge (Qgd) | 2.9 | nC | |||
| Turn-on Delay Time (tD(on)) | VGS=4.5V, VDS=10V, ID=6.8A RGEN=3 | 9 | ns | ||
| Turn-on Rise Time (tr) | 30 | ns | |||
| Turn-off Delay Time (tD(off)) | 35 | ns | |||
| Turn-off fall Time (tf) | 10 | ns | |||
| Diode Forward Voltage (VSD) | IS=6.8A,VGS=0V | 1.2 | V | ||
Notes:
1. Data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2. Data tested by pulsed, pulse width 300s, duty cycle 2%.
3. Power dissipation is limited by 150 junction temperature.
4. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
Package Mechanical Data
| Symbol | Dimensions in Millimeters | MIN. | MAX. |
|---|---|---|---|
| A | 0.900 | 1.150 | |
| A1 | 0.000 | 0.100 | |
| A2 | 0.900 | 1.050 | |
| b | 0.300 | 0.500 | |
| c | 0.080 | 0.150 | |
| D | 2.800 | 3.000 | |
| E | 1.200 | 1.400 | |
| E1 | 2.250 | 2.550 | |
| e | 0.950TYP | ||
| e1 | 1.800 | 2.000 | |
| L | 0.550REF | ||
| L1 | 0.300 | 0.500 | |
| 0 | 8 |
2207281330_Leiditech-SE2312_C3647033.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
