Leiditech IAUZ40N06S5N050 Power MOSFET N Channel Enhancement Mode Featuring 60A Pulsed Drain Current
Key Attributes
Model Number:
IAUZ40N06S5N050
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
RDS(on):
10mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
4.1pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
1.1821nF@50V
Pd - Power Dissipation:
60W
Gate Charge(Qg):
18.4nC@10V
Mfr. Part #:
IAUZ40N06S5N050
Package:
DFN3x3-8L
Product Description
Product Overview
The AP65N06DF is an N-Channel Enhancement Mode Power MOSFET designed for various applications. It offers a continuous drain current of 20A at 25C and 60A pulsed drain current. With a low drain-source on-state resistance of 7.5 m at VGS=10V and ID=20A, and 10 m at VGS=4.5V and ID=10A, this MOSFET is suitable for power switching applications. Its robust construction and specified thermal resistance make it a reliable component for demanding environments.
Product Attributes
- Brand: Leiditech
- Product ID: AP65N06DF
- Package Type: DFN3*3-8L
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Country of Origin: China (implied by Shanghai Leiditech Electronic Co.,Ltd)
Technical Specifications
Absolute Maximum Ratings
| Symbol | Parameter | Value | Unit | Conditions |
|---|---|---|---|---|
| VDS | Drain source voltage | 60 | V | |
| VGS | Gate source voltage | 20 | V | |
| ID@TA=25 | Continuous drain current | 20 | A | |
| ID@TA=70 | Continuous drain current | 11 | A | |
| IDM | Pulsed drain current | 60 | A | |
| PD@TA=25 | Power dissipation | 60 | W | |
| EAS | Single pulsed avalanche energy | 30 | mJ | |
| TSTG | Storage Temperature Range | -55 to 150 | ||
| Tj | Operation and storage temperature | -55 to 150 | ||
| RJC | Thermal resistance, junction-case | 2.1 | C/W | |
| RJA | Thermal resistance, junction-ambient | 85 | C/W | 5) |
Electrical Characteristics
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-source breakdown voltage | VGS=0 V, ID=250 A | 60 | 68 | V | |
| VGS(th) | Gate threshold voltage | VDS=VGS, ID=250 A | 1.2 | 1.5 | 2.5 | V |
| RDS(ON) | Drain-source on-state resistance | VGS=10 V, ID=20 A | 7.5 | 10 | m | |
| VGS=4.5 V, ID=10 A | 10 | 13 | m | |||
| IGSS | Gate-source leakage current | VGS=20 V | 100 | nA | ||
| IDSS | Drain-source leakage current | VDS=60 V, VGS=0 V | 1 | A | ||
| Ciss | Input capacitance | VGS=0 V, VDS=50 V, =100 kHz | 1182.1 | pF | ||
| Coss | Output capacitance | 199.5 | pF | |||
| Crss | Reverse transfer capacitance | 4.1 | pF | |||
| td(on) | Turn-on delay time | VGS=10 V, VDS=50 V, RG=2 , ID=10 A | 17.9 | ns | ||
| tr | Rise time | 4.0 | ns | |||
| td(off) | Turn-off delay time | 34.9 | ns | |||
| tf | Fall time | 5.5 | ns | |||
| Qg | Total gate charge | ID=10 A, VDS=50 V, VGS=10 V | 18.4 | nC | ||
| Qgs | Gate-source charge | 3.3 | nC | |||
| Qgd | Gate-drain charge | 3.1 | nC | |||
| Vplateau | Gate plateau voltage | 2.8 | V | |||
| IS | Diode forward current | VGS<Vth | 60 | A | ||
| ISP | Pulsed source current | 180 | A | |||
| VSD | Diode forward voltage | IS=20 A, VGS=0 V | 1.3 | V | ||
| trr | Reverse recovery time | IS=10 A, di/dt=100 A/s | 41.8 | ns | ||
| Qrr | Reverse recovery charge | 36.1 | nC | |||
| Irrm | Peak reverse recovery current | 1.4 | A |
Package Mechanical Data - DFN3*3-8L
| Symbol | Common | mm | Min | Mim | Max |
|---|---|---|---|---|---|
| A | 0.70 | 0.75 | 0.85 | ||
| A1 | / | / | 0.05 | ||
| b | 0.20 | 0.30 | 0.40 | ||
| c | 0.10 | 0.152 | 0.25 | ||
| D | 3.15 | 3.30 | 3.45 | ||
| D1 | 3.00 | 3.15 | 3.25 | ||
| D2 | 2.29 | 2.45 | 2.65 | ||
| E | 3.15 | 3.30 | 3.45 | ||
| E1 | 2.90 | 3.05 | 3.20 | ||
| E2 | 1.54 | 1.74 | 1.94 | ||
| E3 | 0.28 | 0.48 | 0.65 | ||
| E4 | 0.37 | 0.57 | 0.77 | ||
| E5 | 0.10 | 0.20 | 0.30 | ||
| e | 0.60 | 0.65 | 0.70 | ||
| K | 0.59 | 0.69 | 0.89 | ||
| L | 0.30 | 0.40 | 0.50 | ||
| L1 | 0.06 | 0.125 | 0.20 | ||
| t | 0 | 0.075 | 0.13 | ||
| 10 | 12 | 14 |
Contact Information
| Entity | Details |
|---|---|
| Company | Shanghai Leiditech Electronic Co.,Ltd |
| sale1@leiditech.com | |
| Tel | +86- 021 50828806 |
| Fax | +86- 021 50477059 |
| Website | www.leiditech.com |
2410121549_Leiditech-IAUZ40N06S5N050_C3647078.pdf
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