Power control TRIAC KY BTB12-800SW with 800 volts repetitive peak off state voltage and 12 amp current
Key Attributes
Model Number:
BTB12-800SW
Product Custom Attributes
Holding Current (Ih):
25mA
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
12A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
126A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BTB12-800SW
Package:
TO-263
Product Description
ShenZhenHanKingyuan Electronic CO.,Ltd BTA/BTB12 Series TRIACs
The BTA/BTB12 Series TRIACs from ShenZhenHanKingyuan Electronic are high-performance semiconductor devices designed for AC power control applications. Available in both 3-quadrant and 4-quadrant configurations, these TRIACs offer robust performance with an RMS on-state current of 12A and repetitive peak off-state voltages of up to 1000V. They are suitable for a wide range of applications including washing machines, vacuums, massagers, solid-state relays, and AC motor speed regulation. The series is offered in various package types, including insulated and non-insulated TO-220 variants and the TO-263 package, providing flexibility for different design requirements.
Product Attributes
- Brand: ShenZhenHanKingyuan Electronic CO.,Ltd
- Series: BTA/BTB12
- Product Type: TRIACs
- Origin: Shenzhen
- Trademark: KY logo (registered)
Technical Specifications
| Parameter | Conditions | BTA12/BTB12-800 | BTA12/BTB12-1000 | Unit |
|---|---|---|---|---|
| Repetitive Peak Off-State Voltage (VDRM/VRRM) | 800 | 1000 | V | |
| R.M.S On-State Current (IT(RMS)) | Tc=110C | 12 | A | |
| Surge On-State Current (ITSM) | 120/126 | A | ||
| It for fusing | Tp=10ms | 78 | As | |
| Average Gate Power Dissipation (PG(AV)) | Tj=125C | 1 | W | |
| Peak Gate Current (IGM) | tp=20us, Tj=125C | 4 | A | |
| Operating Junction Temperature (Tj) | -40~125 | C | ||
| Storage Temperature (TSTG) | -40~150 | C | ||
| Repetitive Peak Off-State Current (IDRM) | Tj=25C | 5 | uA | |
| Repetitive Peak Off-State Current (IDRM) | Tj=125C | 1 | mA | |
| Repetitive Peak Reverse Current (IRRM) | Tj=25C | 5 | uA | |
| Repetitive Peak Reverse Current (IRRM) | Tj=125C | 1 | mA | |
| Forward "on" voltage (VTM) | IT=17A, tp=380us | 1.55 | V | |
| Gate trigger voltage (VGT) | VD=12V, RL=30 | 1.3 | V | |
| Critical rate of rise of on-state current (di/dt) | I,II,III, F=100Hz, IG=2xIGT, tr 100ns | 50 | A/us | |
| Critical rate of rise of on-state current (di/dt) | IV, F=100Hz, IG=2xIGT, tr 100ns | 10 | A/us | |
| Gate trigger current (IGT) | I,II,III, VD=12V, RL=30 | 50 | mA | |
| Gate trigger current (IGT) | IV, VD=12V, RL=30 | 100 | mA | |
| Holding current (IH) | IT=0.2A | 50 | mA | |
| Gate non-trigger voltage (VGD) | ALL, VD=VDRM, TJ=125C, RL=3.3K | 0.2 | V | |
| Critical-rate of rise of commutation voltage (dv/dt) | TJ=125C, VD=2/3VDRM, Gate | 1000 | V/us | |
| Thermal resistance Junction to case (Rth(j-c)) | 3.3 | C/W | ||
| Thermal resistance Junction to ambient (Rth(j-a)) | 60 | C/W | ||
2511102004_KY-BTB12-800SW_C5366674.pdf
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