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quality Power management N Channel MOSFET Leiditech LM3400 with Trench Power LV technology and load switching factory
quality Power management N Channel MOSFET Leiditech LM3400 with Trench Power LV technology and load switching factory

Power management N Channel MOSFET Leiditech LM3400 with Trench Power LV technology and load switching

Key Attributes
Model Number: LM3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.6A
RDS(on):
27mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
36pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
535pF@15V
Gate Charge(Qg):
4.8nC
Mfr. Part #:
LM3400
Package:
SOT-23
Product Description

Product Overview

The LM3400 is an N-Channel Power MOSFET featuring Trench Power LV MOSFET technology and a high-density cell design for low RDS(ON). It is designed for efficient power management applications, including battery protection and load switching. This enhancement mode MOSFET offers high-speed switching capabilities.

Product Attributes

  • Brand: Leiditech
  • Model: LM3400
  • Technology: Trench Power LV MOSFET
  • Channel Type: N-Channel
  • Mode: Enhancement Mode

Technical Specifications

Parameter Symbol Conditions Min Typ Max Unit
Product Summary
VDS VDS 30 V
ID ID 5.6 A
RDS(ON) RDS(ON) VGS=10V 27 m
RDS(ON) RDS(ON) VGS=4.5V 33 m
RDS(ON) RDS(ON) VGS=2.5V 51 m
General Description
Technology Trench Power LV MOSFET High density cell design for low RDS(ON)
Applications
Battery protection, Load switch, Power management
Absolute Maximum Ratings (TA=25 unless otherwise noted)
Drain-source Voltage VDS 30 V
Gate-source Voltage VGS -12 +12 V
Drain Current @ Steady State (TA=25) ID @ Steady State 5.6 A
Drain Current @ Steady State (TA=70) ID @ Steady State 4.5 A
Pulsed Drain Current IDM 23 A
Total Power Dissipation @ TA=25 PD @ TA=25 1.2 W
Thermal Resistance Junction-to-Ambient @ Steady State RJA @ Steady State 104 / W
Junction and Storage Temperature Range TJ ,TSTG -55 +150
Electrical Characteristics (TJ=25 unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250A 30 V
Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 A
Gate-Body Leakage Current IGSS VGS= 12V, VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS= VGS, ID=250A 0.65 0.9 1.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=5.6A 21 27 m
Static Drain-Source On-Resistance RDS(ON) VGS= 4.5V, ID=5.0A 25 33 m
Static Drain-Source On-Resistance RDS(ON) VGS=2.5V, ID=3.0A 33 51 m
Diode Forward Voltage VSD IS=5.6A,VGS=0V 0.8 1.2 V
Maximum Body-Diode Continuous Current IS 5.6 A
Dynamic Parameters
Input Capacitance Ciss VDS=15V,VGS=0V,f=1MHZ 535 pF
Output Capacitance Coss 130 pF
Reverse Transfer Capacitance Crss 36 pF
Switching Parameters
Total Gate Charge Qg VGS=4.5V,VDS=15V,ID=5.6A 4.8 nC
Gate Source Charge Qgs 1.2 nC
Gate Drain Charge Qg d 1.7 nC
Turn-on Delay Time tD(on) VGS=4.5V,VDD=15V, ID=1A, RGEN=2.8 12 ns
Turn-on Rise Time tr 52 ns
Turn-off Delay Time tD(off) 17 ns
Turn-off Fall Time tf 10 ns
Ordering Information (Example)
PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE
LM3400 F2 3400 3000 30000 120000 7 reel

2201121830_Leiditech-LM3400_C2939742.pdf

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