Sensitive Gate SCRs KY BT151-650R Standard Series for AC Motor Speed Regulation and Power Control

Key Attributes
Model Number: BT151-650R
Product Custom Attributes
Holding Current (Ih):
-
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
12A
Peak Off - State Voltage(Vdrm):
650V
Current - Surge(Itsm@f):
120A
SCR Type:
1 SCR
Gate Trigger Voltage (Vgt):
1V
Operating Temperature:
-40℃~+125℃
Mfr. Part #:
BT151-650R
Package:
TO-220
Product Description

ShenZhenHanKingyuan Electronic CO.,Ltd BT151 Series 12A SCRs

The BT151 Series Standard SCRs from ShenZhenHanKingyuan Electronic CO.,Ltd are sensitive gate thyristors designed for various AC power control applications. They offer reliable performance with a standard IT(RMS) of 12A and a low VGT of 1V. Available in VDRM/VRRM ratings of 600V and 800V, these SCRs are suitable for applications such as washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.

Product Attributes

  • Brand: ShenZhenHanKingyuan Electronic CO.,Ltd
  • Series: BT151 Series
  • Type: Standard SCRs, Sensitive Gate SCR
  • Origin: Shenzhen
  • Trademark: KY logo (registered)

Technical Specifications

ParameterConditionsRatingsUnit
Absolute Maximum Ratings
VDRM / VRRM Repetitive Peak Off-State Voltage600, 800V
IT(RMS) R.M.S On-State CurrentTc=105C12A
IT(AV) On-state average currentTC=105C7.5A
ITSM Surge On-State CurrentTp=10ms/tp=8.3ms120/132A
It for fusingTp=10ms75As
PGM Peak Gate Power DissipationTj=125C2W
PG(AV) Average Gate Power DissipationTj=125C0.5W
Tj Operating Junction Temperature-40~125C
TSTG Storage Temperature-40~150C
Electrical Characteristics
IDRM Repetitive Peak Off-State CurrentTc=25C10uA
IDRM Repetitive Peak Off-State CurrentTc=125C1mA
IRRM Repetitive Peak Reverse CurrentTc=25C10uA
IRRM Repetitive Peak Reverse CurrentTc=125C1mA
VTM Forward "on" voltageIT=23A, tp=380us1.7V
VGT Gate trigger voltageVD=12V ,RL=301.0V
di/dt Critical rate of rise of on-state currentTj=125C, IG=2xIGT, tr100ns50A/us
IGT Gate trigger currentVD=12V, IT=0.1A20mA
IL Latching currentIG=1.2IGT40mA
IH Holding currentIT=0.1A30mA
VGD Gate non-trigger voltageVD=VDRM, TJ=125C,RL=3.3K,RGK=1K0.25V
dv/dt Critical-rate-of-rise of commutation voltageTJ=125C, VD=2/3VDRM, Gate open circuit200V/us
Rth(j-c) Thermal resistance Junction to case1C/W
Rth(j-a) Thermal resistance Junction to ambient50C/W

Package Mechanical Data

Available packages include TO-220C, TO-252, TO-251, and TO-263.


2410121306_KY-BT151-650R_C2831674.pdf

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