power conversion device LGE TB6S glass passivated silicon bridge rectifier for electronic circuits
Key Attributes
Model Number:
TB6S
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
950mV@0.8A
Current - Rectified:
800mA
Voltage - DC Reverse(Vr):
600V
Mfr. Part #:
TB6S
Package:
TBS
Product Description
Product Overview
The TB2S-TB10S series are glass passivated silicon bridge rectifiers designed for efficient power conversion. They offer high surge overload ratings, space-saving printed circuit board mounting, and are UL recognized. These rectifiers are suitable for applications requiring high-temperature soldering and reliable performance.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Plastic (UL flammability classification 94V-O)
- Color: Not specified
- Certifications: UL recognized under Component Index, file number E239431
Technical Specifications
| Characteristic | Symbol | TB2S | TB4S | TB6S | TB8S | TB10S | Units |
| Peak Repetitive Reverse Voltage | VRRM | 200 | 400 | 600 | 800 | 1000 | V |
| RMS Reverse Voltage | VRMS | 140 | 280 | 420 | 560 | 700 | V |
| DC Blocking Voltage | VDC | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum average forward Output current TL=100C | IF(AV) | 0.8 1) | 1.0 2) | A | |||
| Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load | IFSM | 30 | A | ||||
| Current squared time < 8.3ms , Ta = 25 | I2t | 3.74 | A2s | ||||
| Typical thermal resistance junction to lead On aluminum substrate | RJL | 25 | /W | ||||
| Typical thermal resistance junction to ambient | RJA | 80 | /W | ||||
| Operating junction temperature range | TJ | - 55 ---- + 150 | |||||
| Storage temperature range | TSTG | - 55 ---- + 150 | |||||
| Maximum instantaneous forward voltage at 0.4 A | VF | 0.95 | V | ||||
| Maximum reverse current @TA=25 at rated DC blocking voltage | IR | 10 | A | ||||
2410122132_LGE-TB6S_C19272959.pdf
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