Power Switching N Channel MOSFET KUU AO4468 with Low Drain Source On Resistance and Heat Dissipation
Key Attributes
Model Number:
AO4468
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10.5A
RDS(on):
27mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Input Capacitance(Ciss):
572pF
Output Capacitance(Coss):
81pF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
6.2nC@10V
Mfr. Part #:
AO4468
Package:
SOP-8
Product Description
Product Overview
This N-Channel MOSFET features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and an excellent package for good heat dissipation. It is designed for power switching applications.
Product Attributes
- Device Code: 4468A
- N-channel MOSFET
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| BV(BR)DSS | Drain-Source Breakdown Voltage | VGS=0VID=250A | 30 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=30VVGS=0V | -- | -- | 1.0 | A |
| IGSS | Gate-Body Leakage Current | VGS=20VVDS=0V | -- | -- | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGSID=250A | 1.0 | 1.5 | 2.5 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=10V ID=10.5A | -- | 14 | 19 | m |
| VGS=4.5VID=9A | -- | 20 | 27 | m | ||
| CISS | Input Capacitance | VDS=15VVGS=0V f=1MHz | -- | 572 | -- | pF |
| COSS | Output Capacitance | VDS=15VVGS=0V f=1MHz | -- | 81 | -- | pF |
| CRSS | Reverse Transfer Capacitance | VDS=15VVGS=0V f=1MHz | -- | 65 | -- | pF |
| Qg | Total Gate Charge | -- | 6.2 | -- | nC | |
| Qgs | Gate Source Charge | -- | 2.4 | -- | nC | |
| Qgd | Gate Drain Charge | -- | 2.5 | -- | nC | |
| td(on) | Turn-on Delay Time | VDD=15VID=10A VGS=10VRG=3 | -- | 3 | -- | nS |
| tr | Turn-on Rise Time | VDD=15VID=10A VGS=10VRG=3 | -- | 7.5 | -- | nS |
| td(off) | Turn-Off Delay Time | VDD=15VID=10A VGS=10VRG=3 | -- | 20 | -- | nS |
| tf | Turn-Off Fall Time | VDD=15VID=10A VGS=10VRG=3 | -- | 4 | -- | nS |
| VSD | Forward on voltage | Tj=25Is=10.5A | -- | 0.8 | 1.2 | V |
| PD | Maximum Power Dissipation | Tc=25C | -- | -- | 2.5 | W |
| RJA | Thermal Resistance Junction-Ambient | Mounted on Large Heat Sink | -- | 75 | -- | C/W |
| VDS | Drain-Source Voltage | 30 | -- | -- | V | |
| VGS | Gate-Source Voltage | 20 | -- | -- | V | |
| TJ | Maximum Junction Temperature | -- | -- | 150 | C | |
| TSTG | Storage Temperature Range | -50 | -- | 155 | C | |
| ID | Tested Continuous Drain Current | Tc=25C | -- | -- | 10.5 | A |
| IDM | Pulse Drain Current | Tc=25C | -- | -- | 50 | A |
| IS | Diode Continuous Forward Current | Tc=25C | -- | -- | 10.5 | A |
2410122018_KUU-AO4468_C33551024.pdf
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