Power MOSFET KUU 50N03 featuring 50A continuous drain current and low gate charge for applications
Key Attributes
Model Number:
50N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
RDS(on):
15mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
200pF
Input Capacitance(Ciss):
940pF
Output Capacitance(Coss):
235pF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
43nC@10V
Mfr. Part #:
50N03
Package:
TO-252
Product Description
Product Overview
The 50N03 is an N-channel enhancement mode power MOSFET designed for high-performance applications. It features a continuous drain current of 50A and a drain-source voltage of 30V. Key advantages include low capacitance, optimized gate charge, and fast switching capability, making it suitable for applications requiring efficient power management. This device meets ROHS and Green Product requirements with full function reliability approval.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: ROHS, Green Product
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | TA=25C | 50 | A | ||
| Pulsed Drain Current | IDM | Note 2 | 100 | A | ||
| Single Pulsed Avalanche Energy | EAS | Note 3 | 66 | mJ | ||
| Power Dissipation | PD | TA=25C | 40 | W | ||
| Junction temperature | Tj | +150 | C | |||
| Storage temperature | Tstg | -55 | ~ | +150 | C | |
| THERMAL DATA | ||||||
| Junction to Ambient | JA | TO-252 (Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.) | 50 | C/W | ||
| Junction to Case | JC | TO-252 (Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.) | 3.13 | C/W | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| OFF CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 30 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=30V, VGS=0V | 1.5 | A | ||
| Gate- Source Leakage Current | IGSS | VGS=12V, VDS=0V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS , ID=250A | 1.0 | 2.5 | V | |
| Static Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=25A | 10 | m | ||
| Static Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=25A | 15 | m | ||
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | CISS | VDS=15V,VGS=0V f= 1.0MHz | 940 | pF | ||
| Output Capacitance | COSS | VDS=15V,VGS=0V f= 1.0MHz | 235 | pF | ||
| Reverse Transfer Capacitance | CRSS | VDS=15V,VGS=0V f= 1.0MHz | 200 | pF | ||
| SWITCHING CHARACTERISTICS | ||||||
| Total Gate Charge | QG | VDS=24V, VGS= 10V,ID=50A Note 1 | 43 | nC | ||
| Gate-Source Charge | QGS | VDS=24V, VGS= 10V,ID=50A Note 1 | 6 | nC | ||
| Gate-Drain Charge | QGD | VDS=24V, VGS= 10V,ID=50A Note 1 | 16 | nC | ||
| Turn-On Delay Time | tD(ON) | VDS=15V,ID=50A,VGS= 10V RG=3 Note 1 | 8 | ns | ||
| Turn-On Rise Time | tR | VDS=15V,ID=50A,VGS= 10V RG=3 Note 1 | 17 | ns | ||
| Turn-Off Delay Time | tD(OFF) | VDS=15V,ID=50A,VGS= 10V RG=3 Note 1 | 25 | ns | ||
| Turn-Off Fall Time | tF | VDS=15V,ID=50A,VGS= 10V RG=3 Note 1 | 23 | ns | ||
| SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 45 | A | |||
| Drain-Source Diode Forward Voltage | VSD | IS=50A,VGS=0V | 1.4 | V | ||
| Reverse Recovery Time | trr | IS=30A,VGS=0V,dI/dt=100A/s | 164 | ns | ||
| Reverse Recovery Charge | Qrr | IS=30A,VGS=0V,dI/dt=100A/s | 300 | nC | ||
2411121111_KUU-50N03_C41383588.pdf
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