power switching MOSFET KUU SI2302 2.9A N Channel TrenchFET with low on resistance and fast switching

Key Attributes
Model Number: SI2302 2.9A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.9A
Operating Temperature -:
-
RDS(on):
59mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Output Capacitance(Coss):
120pF
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
300pF
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
SI2302 2.9A
Package:
SOT-23
Product Description

Product Overview

This N-Channel TrenchFET Power MOSFET is designed for efficient power switching applications. It offers low on-resistance and fast switching characteristics, making it suitable for various electronic circuits requiring reliable power management.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Plastic-Encapsulated
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolTest ConditionsMINTYPMAXUnits
Maximum RatingsVDS20V
VGS±10V
ID2.9A
PD(TA=25 unless otherwise noted)1W
Tj150
Tstg-55150
Electrical CharacteristicsV(BR)DSSVGS=0V,ID=250uA20V
Vth(GS)VDS= VGS, ID=250 uA0.50.751.2V
IGSSVDS=0V, VGS=±10V±100nA
IDSSVDS=20V, VGS=0V1uA
rDS(ON)VGS=2.5V, ID=2.5A3759
Electrical CharacteristicsrDS(ON)VGS=4.5V, ID=2.9A3045
gfsVDS=5V, ID=2.9A9.5s
Dynamic CharacteristicsCissVDS=10V, VGS=0V, f=1MHz300pF
Coss120pF
Crss80pF
Switching Capacitancetd(on)VDD=10V, ID=2.9A, VGS=4.5V, RGEN=6Ω1015nS
tr5085nS
td(off)1745nS
tf1020nS
Total Gate ChargeQg4.010nC
Qgs0.65nC
QgdVDS=10V, ID=2.9A, VGS=4.5V1.2nC
Drain-Source Diode CharacteristicsVSDVGS=0V, IS=2.9A0.751.2V
Is2.9A

2512301750_KUU-SI2302-2-9A_C2944168.pdf

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