12 Volt P Channel MOSFET KUU KIRLML6401TRPBF Featuring Ultra Low On Resistance for Power Dissipation
Key Attributes
Model Number:
KIRLML6401TRPBF
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
4.3A
RDS(on):
125mΩ@1.8V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
125pF
Number:
1 P-Channel
Output Capacitance(Coss):
180pF
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
830pF
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
KIRLML6401TRPBF
Package:
SOT-23
Product Description
Product Overview
This P-Channel 12-V(D-S) MOSFET features ultra low on-resistance and is available in tape and reel. It is designed for applications such as load switches for portable devices and DC/DC converters.
Product Attributes
- Brand: KIRLML6401TRPBF
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -12 | V | |||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Continuous Drain Current | ID | -4.3 | A | |||
| Pulsed Diode Current | IDM | -34 | A | |||
| Power Dissipation | PD | 1.4 | W | |||
| Thermal Resistance Junction to Ambient | RJA | (t≤5s) | 100 | °C/W | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -55 | +150 | °C | ||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = -250µA | -12 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID = -250µA | -0.4 | -1 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS = ±8V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS = -12V, VGS =0V | -1 | µA | ||
| Drain-source on-state resistance | RDS(on) | VGS = -4.5V, ID = -4.3A | 50 | mΩ | ||
| VGS = -2.5V, ID = -2.5A | 85 | mΩ | ||||
| VGS = -1.8V, ID = -2A | 125 | mΩ | ||||
| Forward transconductance | gfs | VDS = -4.5V, ID = -4.3A | 8.3 | S | ||
| Diode forward voltage | VSD | IS=-1A, VGS=0V | -0.8 | -1.2 | V | |
| Continuous Source-Drain Diode Current | IS | -1.3 | A | |||
| Input capacitance | Ciss | VDS = -10V,VGS =0V, f=1MHz | 830 | pF | ||
| Output capacitance | Coss | 180 | pF | |||
| Reverse transfer capacitance | Crss | 125 | pF | |||
| Total gate charge | Qg | VDS = -10V,VGS = -4.5V, ID = -4.3A | 10 | nC | ||
| Gate-source charge | Qgs | 1.4 | nC | |||
| Gate-drain charge | Qgd | 2.6 | nC | |||
| Gate resistance | Rg | f=1MHz | 6.5 | Ω | ||
| Turn-on delay time | td(on) | VDS= -10V RL=6Ω, ID ≈ -1A, VGEN=- 4.5V,Rg=3Ω | 11 | ns | ||
| Rise time | tr | 28 | ns | |||
| Turn-off delay time | td(off) | 45 | ns | |||
| Fall time | tf | 34 | ns | |||
| Body Diode Reverse Recovery Time | trr | IF= -4.3A, dI/dt=100A/µs | 22 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF= -4.3A, dI/dt=100A/µs | 8 | nC |
2410121930_KUU-KIRLML6401TRPBF_C2891689.pdf
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