SOT 363 packaged dual N channel MOSFET KUU 2N7002DW featuring low RDS ON and high saturation current
Key Attributes
Model Number:
2N7002DW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
Operating Temperature -:
-
RDS(on):
7Ω@5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
2N7002DW
Package:
SOT-363
Product Description
Product Overview
The 2N7002DW is a dual N-channel MOSFET in a SOT-363 package, featuring a high-density cell design for low RDS(ON). It is designed for voltage-controlled small signal switching applications, offering a rugged and reliable solution with high saturation current capability.
Product Attributes
- Brand: YongyuTai (implied by datasheet URL)
- Package: SOT-363
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS=0 V, ID=250 A | 60 | V | ||
| Gate-threshold voltage | Vth(GS) | VDS=VGS, ID=250 A | 1 | 1.6 | 2.5 | V |
| Gate-body leakage | lGSS | VDS=0 V, VGS=20 V | 80 | nA | ||
| Zero gate voltage drain current | IDSS | VDS=60 V, VGS=0 V | 80 | nA | ||
| Drain-source on-resistance | RDS(on) | VGS=10 V, ID=500mA | 1.1 | 5 | ||
| VGS=5 V, ID=50mA | 1.2 | 7 | ||||
| Forward transconductance | gfs | VDS=10 V, ID=200mA | 80 | 500 | mS | |
| Drain-source on-voltage | VDS(on) | VGS=10V, ID=500mA | 0.5 | 3.75 | V | |
| VGS=5V, ID=50mA | 0.05 | 0.375 | ||||
| Diode forward voltage | VSD | IS=115mA, VGS=0 V | 0.55 | 1.2 | V | |
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 50 | pF | ||
| Output capacitance | Coss | 25 | ||||
| Reverse transfer capacitance | Crss | 5 | ||||
| Turn-on time | td(on) | VDD=25 V, RL=50 ID=500mA,VGEN=10V,G=25 | 20 | ns | ||
| Turn-off time | td(off) | 40 |
2410121628_KUU-2N7002DW_C22389968.pdf
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