Surface Mount Dual N channel Power MOSFET KUU 8205A with High Current Handling and Low Gate Charge
Key Attributes
Model Number:
8205A
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-
RDS(on):
32mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
125pF@10V
Number:
2 N-Channel
Pd - Power Dissipation:
-
Input Capacitance(Ciss):
800pF@10V
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
8205A
Package:
TSSOP-8
Product Description
Product Overview
The 8205A is a dual N-channel Power MOSFET featuring TrenchFET technology, offering excellent RDS(on), low gate charge, and high power and current handling capabilities. It is designed for surface mount applications and is suitable for battery protection, load switching, and power management.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | (Ta=25) | 20 | A | ||
| Pulsed Drain Current | IDM | (note 1) | 20 | A | ||
| Thermal Resistance from Junction to Ambient | RJA | (note 2) | 85 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55~+150 | ||||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10 s) | 260 | |||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =19V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =12V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A (note 3) | 0.5 | V | ||
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =5A (note 3) | 24 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =4A (note 3) | 32 | m | ||
| Forward tranconductance | gFS | VDS =5V, ID =5A (note 3) | 10 | S | ||
| Diode forward voltage | VSD | IS=1.25A, VGS = 0V (note 3) | 1.2 | V | ||
| DYNAMIC CHARACTERISTICS (note4) | ||||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 800 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 155 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 125 | pF | ||
| SWITCHING CHARACTERISTICS (note 4) | ||||||
| Turn-on delay time | td(on) | VDD=10V,VGS=4V, ID=5A,RGEN=10 | 18 | ns | ||
| Turn-on rise time | tr | VDD=10V,VGS=4V, ID=5A,RGEN=10 | 4.8 | ns | ||
| Turn-off delay time | td(off) | VDD=10V,VGS=4V, ID=5A,RGEN=10 | 43.5 | ns | ||
| Turn-off fall time | tf | VDD=10V,VGS=4V, ID=5A,RGEN=10 | 20 | ns | ||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V,ID=5A | 11 | nC | ||
| Gate-Source Charge | Qgs | VDS =10V,VGS =4.5V,ID=5A | 2.2 | nC | ||
| Gate-Drain Charge | Qg d | VDS =10V,VGS =4.5V,ID=5A | 2.5 | nC | ||
2410121605_KUU-8205A_C20616232.pdf
Related Products
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
