power switching device KUU 5N10 suitable for battery protection and load switch applications
Key Attributes
Model Number:
5N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
125mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.6pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
182pF@50V
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
3.75nC@10V
Mfr. Part #:
5N10
Package:
SOT-23
Product Description
Product Overview
The 5N10 utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications.
Product Attributes
- Brand: 5N10
- Application: Battery protection, Load switch, Uninterruptible power supply
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| VDS | Drain-Source Voltage | TC=25 | 100 | V | ||
| VGS | Gate-Source Voltage | TC=25 | 20 | V | ||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V | TC=25 | 5 | A | ||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V | TA=70 | 3.2 | A | ||
| IDM | Pulsed Drain Current | 15 | A | |||
| PD@TA=25 | Total Power Dissipation | TA=25 | 3.1 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-ambient(steady state) | 100 | /W | |||
| RJA | Thermal Resistance Junction-ambient(t<10s) | 40 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | 108 | V | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=4A | 90 | 125 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=2A | 115 | 145 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=85 | 50 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 2.3 | 4.6 | ||
| Qg | Total Gate Charge (10V) | VDS=30V , VGS=10V , ID=4A | 3.57 | nC | ||
| Qgs | Gate-Source Charge | 0.76 | nC | |||
| Qgd | Gate-Drain Charge | 0.71 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3 ID=1A | 11 | ns | ||
| Tr | Rise Time | 6 | ns | |||
| Td(off) | Turn-Off Delay Time | 30 | ns | |||
| Tf | Fall Time | 4 | ns | |||
| Ciss | Input Capacitance | VDS=50V , VGS=0V , f=1MHz | 182 | pF | ||
| Coss | Output Capacitance | 30 | pF | |||
| Crss | Reverse Transfer Capacitance | 3.6 | pF | |||
| IS | Continuous Source Current | VG=VD=0V , Force Current | 2 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | 1.2 | V |
2410121456_KUU-5N10_C7587869.pdf
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