N Channel MOSFET Power Switching Device KUU KAO3414 Featuring TrenchFET Technology for Applications
Key Attributes
Model Number:
KAO3414
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.2A
RDS(on):
87mΩ@1.8V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
44pF
Number:
1 N-channel
Output Capacitance(Coss):
66pF
Input Capacitance(Ciss):
436pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
6.2nC@4.5V
Mfr. Part #:
KAO3414
Package:
SOT-23
Product Description
Product Overview
N-Channel 20-V(D-S) MOSFET featuring TrenchFET Power MOSFET technology. Designed for efficient power switching applications.
Product Attributes
- Brand: KAO
- Model: KAO3414
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | V(BR)DSS | VGS = 0V, ID = 250A | 20 | V | ||
| Gate-Source Voltage | VGS | 8 | V | |||
| Gate-Source Threshold Voltage | VGS(th) | VDS =VGS, ID = 250A | 0.4 | 1.4 | V | |
| Gate-Body Leakage Current | IGSS | VDS =0V, VGS = 8V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS =0V | 1 | A | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS = 4.5V, ID = 4.2A | 41 | 50 | m | |
| VGS = 2.5V, ID = 3.6A | 52 | 63 | m | |||
| VGS = 1.8V, ID = 3A | 67 | 87 | m | |||
| Forward Transconductance | gfs | VDS = 5V, ID = 4.2A | 11 | S | ||
| Diode Forward Voltage | VSD | IS= 1A,VGS=0V | 0.8 | 1 | V | |
| Continuous Drain Current | ID | Ta=25 | 4.2 | A | ||
| Pulsed Drain Current | IDM | 15 | A | |||
| Continuous Source-Drain Current (Diode Conduction) | IS | 2 | A | |||
| Power Dissipation | PD | Ta=25 | 1.4 | W | ||
| Thermal Resistance Junction to Ambient | RJA | t10s | 125 | /W | ||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Input Capacitance | Ciss | VDS = 10V, VGS =0V, f=1MHz | 436 | pF | ||
| Output Capacitance | Coss | VDS = 10V, VGS =0V, f=1MHz | 66 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 10V, VGS =0V, f=1MHz | 44 | pF | ||
| Total Gate Charge | Qg | VDS = 10V, VGS = 4.5V, ID = 4.2A | 6.2 | nC | ||
| Gate-Source Charge | Qgs | VDS = 10V, VGS = 4.5V, ID = 4.2A | 1.6 | nC | ||
| Gate-Drain Charge | Qg | VDS = 10V, VGS = 4.5V, ID = 4.2A | 0.5 | nC | ||
| Gate Resistance | Rg | f=1MHz | 3 | |||
| Turn-on Delay Time | td(on) | VDS= 10V RL= 2.7, ID = 4.2A, VGS= 5V,Rg= 6 | 5.5 | ns | ||
| Rise Time | tr | VDS= 10V RL= 2.7, ID = 4.2A, VGS= 5V,Rg= 6 | 6.3 | ns | ||
| Turn-off Delay Time | td(off) | VDS= 10V RL= 2.7, ID = 4.2A, VGS= 5V,Rg= 6 | 40 | ns | ||
| Fall Time | tf | VDS= 10V RL= 2.7, ID = 4.2A, VGS= 5V,Rg= 6 | 12.7 | ns | ||
| Body Diode Reverse Recovery Time | Trr | IF= 4A, dI/dt=100A/s | 12.3 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF= 4A, dI/dt=100A/s | 3.5 | nC |
2410121713_KUU-KAO3414_C2904836.pdf
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