High current KY BT139-800E TRIAC designed for washing machines vacuum cleaners and solid state relays
Key Attributes
Model Number:
BT139-800E
Product Custom Attributes
Holding Current (Ih):
25mA
Current - Gate Trigger(Igt):
10mA
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
16A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
160A@16.7ms
SCR Type:
1 TRIAC
Gate Trigger Voltage (Vgt):
1.5V
Operating Temperature:
-40℃~+125℃
Mfr. Part #:
BT139-800E
Package:
TO-220
Product Description
Product Overview
The ShenZhenHanKingyuan Electronic BT139 Series TRIACs are high-performance 4-quadrant TRIACs designed for AC power control applications. With an RMS on-state current of 16A and a peak off-state voltage of up to 800V, these TRIACs offer reliable switching and control in various electronic systems. They are suitable for applications such as washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: ShenZhenHanKingyuan Electronic
- Origin: Shenzhen
- Product Line: BT139 Series
- Trademark: KY logo
Technical Specifications
| Parameter | Conditions | BT139-600 | BT139-800 | Unit |
|---|---|---|---|---|
| Repetitive Peak Off-State Voltage (VDRM/VRRM) | 600 | 800 | V | |
| R.M.S On-State Current (IT(RMS)) | Tc=110C | 16 | 16 | A |
| Surge On-State Current (ITSM) | 160/168 | 160/168 | A | |
| It for fusing | Tp=10ms | 144 | 144 | As |
| Average Gate Power Dissipation (PG(AV)) | Tj=125C | 1 | 1 | W |
| Peak Gate Current (IGM) | Tj=125C | 4 | 4 | A |
| Operating Junction Temperature (Tj) | -40~125 | -40~125 | C | |
| Storage Temperature (TSTG) | -40~150 | -40~150 | C | |
| Repetitive Peak Off-State Current (IDRM) | Tj=25C | 5 | 5 | uA |
| Repetitive Peak Off-State Current (IDRM) | Tj=125C | 1 | 1 | mA |
| Repetitive Peak Reverse Current (IRRM) | Tj=25C | 5 | 5 | uA |
| Repetitive Peak Reverse Current (IRRM) | Tj=125C | 1 | 1 | mA |
| Forward "on" voltage (VTM) | IT=35A, tp=380us | 1.55 | 1.55 | V |
| Gate trigger voltage (VGT) | VD=12V, RL=30 | 1.5 | 1.5 | V |
| Critical-rate of rise of commutation current (di/dt) | I,II,III IG=2XIGT,tr 100ns,F=100Hz | 50 | 50 | A /us |
| Critical-rate of rise of commutation current (di/dt) | IV IG=2XIGT,tr 100ns,F=100Hz | 10 | 10 | A /us |
| Gate trigger current (IGT) | I,II,III VD=12V, RL=30 | 5 | 5 | mA |
| Gate trigger current (IGT) | IV VD=12V, RL=30 | 10 | 10 | mA |
| Holding current (IH) | IT=0.2A | 10 | 10 | mA |
| Gate non-trigger voltage (VDG) | ALL VD=VDRM, RL=30, TJ=125C | 0.2 | 0.2 | V |
| Critical-rate of rise of commutation voltage (dv/dt) | TJ=125C, VD=2/3VDRM, Gate open circuit | 5 | 5 | V/us |
| Thermal resistance Junction to case (Rth(j-c)) | 1.1 | 1.1 | C/W | |
| Thermal resistance Junction to ambient (Rth(j-a)) | 50 | 50 | C/W |
2410121251_KY-BT139-800E_C2831697.pdf
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