General Purpose Switching N Channel MOSFET KUU 2N7002E with ESD Protection and SOT 23 Package

Key Attributes
Model Number: 2N7002E
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Pd - Power Dissipation:
225mW
Mfr. Part #:
2N7002E
Package:
SOT-23
Product Description

Product Overview

The 2N7002E is an N-Channel Enhancement-Mode MOS FET with ESD protection, designed for general-purpose switching applications. It features a SOT-23 package.

Product Attributes

  • Brand: 2N
  • Model: 7002E
  • Package: SOT-23
  • Channel Type: N-Channel
  • Mode: Enhancement-Mode
  • Protection: ESD

Technical Specifications

CharacteristicSymbolMinTypMaxUnitNotes
Drain-Source Breakdown VoltageBVDSS60V(ID=250uA,VGS=0V)
Gate Threshold VoltageVGS(th)1.02.5V(ID=250uA,VGS= VDS)
Drain-Source On VoltageVDS(ON)0.375V(ID=50mA,VGS=5V)
Drain-Source On VoltageVDS(ON)3.75V(ID=500mA,VGS=10V)
Diode Forward Voltage DropVSD1.5V(ISD=200mA,VGS=0V)
Zero Gate Voltage Drain CurrentIDSS1uA(VGS=0V, VDS= BVDSS)
Gate Body LeakageIGSS+1uA(VGS=+10V, VDS=0V)
Gate Body LeakageIGSS+10uA(VGS=+20V, VDS=0V)
Static Drain-Source On-State ResistanceRDS(ON)2.8(ID=500mA,VGS=10V)
Static Drain-Source On-State ResistanceRDS(ON)3.2(ID=50mA,VGS=5V)
ESD RatingESD2000VHBM

Maximum Ratings

CharacteristicSymbolMaxUnit
Drain-Source VoltageBVDSS60V
Gate- Source VoltageVGS+20V
Drain Current (continuous)IDR300mA
Drain Current (pulsed)IDRM500mA

Thermal Characteristics

CharacteristicSymbolMaxUnitNotes
Total Device DissipationPD225mWTA=25
Derate above251.8mW/
Thermal Resistance Junction to AmbientRJA417/W
Junction and Storage TemperatureTJ,Tstg150-55to+150

2504101957_KUU-2N7002E_C42459883.pdf

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