High density cell P Channel MOSFET KUU AO4485 featuring low RDSON and excellent thermal dissipation
Key Attributes
Model Number:
AO4485
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-
RDS(on):
20mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
300pF
Input Capacitance(Ciss):
2.98nF
Pd - Power Dissipation:
3.2W
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
AO4485
Package:
SOP-8
Product Description
Product Overview
The AO4485 is a P-Channel MOSFET designed for high-density cell applications, offering ultra-low RDS(ON). It features fully characterized avalanche voltage and current, along with excellent package thermal dissipation. This MOSFET is suitable for PWM applications, power management, and load switching.
Product Attributes
- Device Code: 4485A
- Package: SOP-8
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| VDS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250A | -40 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=-40V, VGS=0V | -- | -- | -1 | uA |
| IGSS | Gate-Body Leakage Current | VGS=20V, VDS=0V | -- | -- | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=-250A | -1.0 | -1.8 | -2.5 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=-10V, ID=-12A | -- | 11 | 15 | m |
| VGS=-4.5V, ID=-10A | -- | 16 | 20 | m | ||
| CISS | Input Capacitance | VDS=-20V, VGS=0V, f=1MHz | -- | 2980 | -- | pF |
| COSS | Output Capacitance | VDS=-20V, VGS=0V, f=1MHz | -- | 380 | -- | pF |
| CRSS | Reverse Transfer Capacitance | VDS=-20V, VGS=0V, f=1MHz | -- | 300 | -- | pF |
| Qg | Total Gate Charge | VDS=-20V, ID=-12A, VGS=-10V | -- | 75 | -- | nC |
| Qgs | Gate Source Charge | VDS=-20V, ID=-12A, VGS=-10V | -- | 14 | -- | nC |
| Qgd | Gate Drain Charge | VDS=-20V, ID=-12A, VGS=-10V | -- | 15 | -- | nC |
| td(on) | Turn-on Delay Time | VDD=-12V, ID=-1A, VGS=-10V, RG=3.3 | -- | 10 | -- | nS |
| tr | Turn-on Rise Time | VDD=-12V, ID=-1A, VGS=-10V, RG=3.3 | -- | 17 | -- | nS |
| td(off) | Turn-Off Delay Time | VDD=-12V, ID=-1A, VGS=-10V, RG=3.3 | -- | 38 | -- | nS |
| tf | Turn-Off Fall Time | VDD=-12V, ID=-1A, VGS=-10V, RG=3.3 | -- | 25 | -- | nS |
| VSD | Forward on voltage | Tj=25, Is=-20A | -- | -- | -1.2 | V |
| ID | Tested Continuous Drain Current | Tc=25C | -- | -10 | -- | A |
| IDM | Pulse Drain Current | Tc=25C | -- | -45 | -- | A |
| IS | Diode Continuous Forward Current | Tc=25C | -- | -10 | -- | A |
| PD | Maximum Power Dissipation | Tc=25C | -- | 3.2 | -- | W |
| RJA | Thermal Resistance Junction-to-Ambient | Mounted on Large Heat Sink | -- | 40 | -- | C/W |
| TJ | Maximum Junction Temperature | -- | -- | -- | 150 | C |
| TSTG | Storage Temperature Range | -- | -55 | -- | 150 | C |
| VGS | Gate-Source Voltage | -- | -- | -- | 20 | V |
| VDS | Drain-Source Voltage | -- | -40 | -- | -- | V |
2411121111_KUU-AO4485_C41380287.pdf
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