N Channel Enhancement Mode MOSFET KUU AO3400 with Low On Resistance and 30V VDSS in Small SOT 23 Package
Key Attributes
Model Number:
AO3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.7A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
26.5mΩ@10V,5.7A
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
900pF@15V
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
AO3400
Package:
SOT-23
Product Description
Product Overview
N-Channel Enhancement Mode MOSFET featuring low on-resistance (RDS(ON)) at various gate-source voltages. Designed for electrostatic sensitive devices, it offers robust performance with a maximum continuous drain current of 5.7A and a breakdown voltage of 30V. Packaged in a compact SOT-23 case, it is suitable for a wide range of electronic applications.
Product Attributes
- Electrostatic sensitive devices
- Molding Compound: UL Flammability Classification Rating 94V-0
- Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208
Technical Specifications
| Part Number | Package | RDS(ON) @ VGS=10V (typ.) | RDS(ON) @ VGS=4.5V (typ.) | RDS(ON) @ VGS=2.5V (typ.) | VDSS (V) | ID Continuous @ TA=25C (A) | Power Dissipation (W) | Operating Junction Temperature (C) | Storage Temperature (C) |
| AO3400 | SOT-23 | 22 m | 25.4 m | 34 m | 30 | 5.7 | 1.4 | -55 ~ +150 | -55 ~ +150 |
2410121255_KUU-AO3400_C7603192.pdf
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