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quality AC Power TRIACs KY BT131-89-2L with 600V to 800V Repetitive Peak Off State Voltage and 1A RMS Current factory
quality AC Power TRIACs KY BT131-89-2L with 600V to 800V Repetitive Peak Off State Voltage and 1A RMS Current factory

AC Power TRIACs KY BT131-89-2L with 600V to 800V Repetitive Peak Off State Voltage and 1A RMS Current

Key Attributes
Model Number: BT131-89-2L
Product Custom Attributes
Holding Current (Ih):
5mA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
300mW
Current - On State(It(RMS)):
1A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
12A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Mfr. Part #:
BT131-89-2L
Package:
SOT-89-2
Product Description

ShenZhenHanKingyuan Electronic BT131 Series 1A TRIACs

The BT131 Series TRIACs from ShenZhenHanKingyuan Electronic are 4-quadrant devices designed for various AC power control applications. With an RMS on-state current of 1A and repetitive peak off-state voltages of 600V and 800V, these TRIACs are suitable for use in washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.

Product Attributes

  • Brand: ShenZhenHanKingyuan Electronic
  • Product Line: BT131 Series
  • Type: TRIACs
  • Quadrant: 4 Quadrants
  • Origin: Shenzhen
  • Trademark: KY logo (registered)

Technical Specifications

A /us A /us V/us
Symbol Parameter Conditions Ratings Unit
VDRM / VRRM Repetitive Peak Off-State Voltage 600-800 V
IT(RMS) R.M.S On-State Current Tc=110C 1 A
ITSM Surge On-State Current Tp=10ms 12 A
It It for fusing Tp=10ms 0.72 As
PG(AV) Average Gate Power Dissipation Tj=125C 0.3 W
IGM Peak Gate Current tp=20us, Tj=125C 1.2 A
Tj Operating Junction Temperature -40~125 C
TSTG Storage Temperature -40~150 C
IDRM Repetitive Peak Off-State Current Tj=25C ≤10 uA
IDRM Repetitive Peak Off-State Current Tj=110C ≤200 uA
IRRM Repetitive Peak Reverse Current Tj=25C ≤10 uA
IRRM Repetitive Peak Reverse Current Tj=110C ≤200 uA
VTM Forward "on" voltage IT=1.6A, tp=380us ≤1.5 V
VGD Gate non-trigger voltage VD=VDRM, Tj=110C ≥0.2 V
IH Holding current VD=12V, IGT=0.1A ≤5 mA
IH Holding current ≤10 mA
VGT Gate trigger voltage VD=12V ≤1.2 V
IGT Gate trigger current VD=12V ≤3 mA
IGT Gate trigger current ≤7 mA
di/dt Critical-rate-of-rise of commutation current IT=1A, IG==0.2A,dIg/dt=0.2A/us ≥50
di/dt Critical-rate-of-rise of commutation current IV ≥10
dv/dt Critical-rate-of-rise of commutation voltage TJ=110C, VD=2/3VDRM ≥30

2410121257_KY-BT131-89-2L_C2831926.pdf

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