Ultra Low On Resistance P Channel MOSFET KUU IRLML5203 30V Drain Source Voltage for DC DC Converters
Key Attributes
Model Number:
IRLML5203
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3A
RDS(on):
165mΩ@4.5V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
43pF
Number:
1 P-Channel
Output Capacitance(Coss):
71pF
Input Capacitance(Ciss):
510pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
9.5nC@0V
Mfr. Part #:
IRLML5203
Package:
SOT-23
Product Description
Product Overview
This P-Channel 30V (D-S) MOSFET features ultra-low on-resistance and is ideal for load switching in portable devices and DC/DC converters. Available in tape and reel packaging.
Product Attributes
- Brand: Not Specified
- Origin: Not Specified
- Material: Not Specified
- Color: Not Specified
- Certifications: Not Specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | -3.0 | A | |||
| Pulsed Diode Current | IDM | -24 | A | |||
| Power Dissipation | PD | 1.25 | W | |||
| Thermal Resistance Junction to Ambient | RθJA | (t≤5s) | 100 | °C/W | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -55 | +150 | °C | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250µA | -30 | V | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS =VGS, ID = -250µA | -1 | -2.5 | V | |
| Gate-Source Leakage | IGSS | VDS =0V, VGS = ±20V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -24V, VGS =0V | -1 | µA | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -10V, ID = -3.0A | 98 | mΩ | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -4.5V, ID = -2.5A | 165 | mΩ | ||
| Forward Transconductance | gfs | VDS = -10V, ID = -3A | 3.1 | S | ||
| Diode Forward Voltage | VSD | IS=1A, VGS=0V | -0.8 | -1.2 | V | |
| Continuous Source-Drain Diode Current | IS | -1.3 | A | |||
| Input Capacitance | Ciss | VDS = -15V,VGS =0V, f=1MHz | 510 | pF | ||
| Output Capacitance | Coss | 71 | pF | |||
| Reverse Transfer Capacitance | Crss | 43 | pF | |||
| Total Gate Charge | Qg | VDS = -15V,VGS = -10V, ID = -3A | 9.5 | nC | ||
| Gate-Source Charge | Qgs | 2.3 | nC | |||
| Gate-Drain Charge | Qgd | 1.6 | nC | |||
| Gate Resistance | Rg | f=1MHz | 6.5 | Ω | ||
| Turn-on Delay Time | td(on) | VDS= -15V RL=6Ω, ID ≈ -1A, VGEN= -10V,Rg=3Ω | 12 | ns | ||
| Rise Time | tr | 18 | ns | |||
| Turn-off Delay Time | td(off) | 88 | ns | |||
| Fall Time | tf | 52 | ns | |||
| Body Diode Reverse Recovery Time | Trr | IF= -3.0A, dI/dt=100A/µs | 17 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF= -3.0A, dI/dt=100A/µs | 12 | nC |
2410121844_KUU-IRLML5203_C2985623.pdf
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