Low gate leakage current LGE SI2333 P Channel MOSFET designed for portable electronic power management
Key Attributes
Model Number:
SI2333
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
4.2A
RDS(on):
30mΩ@4.5V;36mΩ@3.3V
Gate Threshold Voltage (Vgs(th)):
600mV
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
76pF
Output Capacitance(Coss):
94pF
Input Capacitance(Ciss):
760pF
Gate Charge(Qg):
7.6nC@4.5V
Mfr. Part #:
SI2333
Package:
SOT-23
Product Description
Product Overview
The SI2333 is a P-Channel Advanced Power MOSFET designed for efficient power management in portable devices. It features low RDS(on) at various gate-source voltages, including logic-level control at -3.3V, making it suitable for applications like charging switches, small brushless DC motor drives, load switches, DC-to-DC converters, and general power management functions. Its SOT-23 package is Pb-free and RoHS compliant.
Product Attributes
- Brand: LGE Semi
- Certifications: PbFree, RoHS Compliant
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage (V(BR)DSS) | VGS=0V, ID=-250A | -12 | -16 | -- | V |
| VDS=-12V, VGS=0V (TA=25) | -- | -- | -1 | A | |
| VDS=-12V, VGS=0V (TA=125) | -- | -- | -100 | A | |
| Gate-Body Leakage Current (IGSS) | VGS=10V, VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage (VGS(TH)) | VDS=VGS, ID=-250A | -0.4 | -0.6 | -1.0 | V |
| VGS=-4.5V, ID=-4A | -- | 32 | 38 | m | |
| VGS=-3.3V, ID=-3A | -- | 36 | 45 | m | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=-4.5V, ID=-4A | -- | 32 | 38 | m |
| VGS=-3.3V, ID=-3A | -- | 36 | 45 | m | |
| VGS=-2.5V, ID=-2A | -- | 40 | 55 | m | |
| Input Capacitance (Ciss) | VDS=-10V, VGS=0V, f=1MHz | -- | 760 | -- | pF |
| Output Capacitance (Coss) | VDS=-10V, VGS=0V, f=1MHz | -- | 94 | -- | pF |
| Reverse Transfer Capacitance (Crss) | VDS=-10V, VGS=0V, f=1MHz | -- | 76 | -- | pF |
| Gate Resistance (Rg) | f=1MHz | -- | 16 | -- | |
| Total Gate Charge (Qg) | VDS=-10V, ID=-3A, VGS=-4.5V | -- | 7.6 | -- | nC |
| Gate Source Charge (Qgs) | VDS=-10V, ID=-3A, VGS=-4.5V | -- | 0.9 | -- | nC |
| Gate Drain Charge (Qgd) | VDS=-10V, ID=-3A, VGS=-4.5V | -- | 1.8 | -- | nC |
| Turn on Delay Time (td(on)) | VDD=-10V, ID=-2A, RG=3.3, VGS=-4.5V | -- | 5.5 | -- | ns |
| Turn on Rise Time (tr) | VDD=-10V, ID=-2A, RG=3.3, VGS=-4.5V | -- | 3.9 | -- | ns |
| Turn Off Delay Time (td(off)) | VDD=-10V, ID=-2A, RG=3.3, VGS=-4.5V | -- | 11.3 | -- | ns |
| Turn Off Fall Time (tf) | VDD=-10V, ID=-2A, RG=3.3, VGS=-4.5V | -- | 36 | -- | ns |
| Source drain current (Body Diode) (ISD) | TA=25 | -- | -- | -2 | A |
| Forward on voltage (VSD) | Tj=25, ISD=-4A, VGS=0V | -- | -0.87 | -1.2 | V |
2509091530_LGE-SI2333_C51892139.pdf
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