P Channel MOSFET LGE 3407 designed for load switching and power management in compact SOT23 package
Key Attributes
Model Number:
3407
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-50℃~+150℃
RDS(on):
43mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
44pF@15V
Output Capacitance(Coss):
65pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
493pF@15V
Gate Charge(Qg):
8.2nC
Mfr. Part #:
3407
Package:
SOT-23
Product Description
Product Overview
The AO3407 is a P-Channel Advanced Power MOSFET designed for efficient power management applications. It features low RDS(on) at VGS=-10V, -5V logic level control, and is housed in a Pb-free, RoHS compliant SOT23 package. Ideal for load switching, switching circuits, high-speed line drivers, and general power management functions.
Product Attributes
- Brand: lgesemi
- Package: SOT23
- Certifications: PbFree, RoHS Compliant
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Common Ratings (TA=25C Unless Otherwise Noted) | ||||||
| VGS | Gate-Source Voltage | ±20 | V | |||
| (BR)DSS | Drain-Source Breakdown Voltage | -30 | V | |||
| TJ | Maximum Junction Temperature | 150 | °C | |||
| TSTG | Storage Temperature Range | -50 | 150 | °C | ||
| ID | Continuous Drain Current | TA=25°C | -4.1 | A | ||
| ID | Continuous Drain Current | TA=70°C | -3.2 | A | ||
| P D | Maximum Power Dissipation | TA=25°C | 1.2 | W | ||
| P D | Maximum Power Dissipation | TA=70°C | 0.9 | W | ||
| θJA | Thermal Resistance Junction-Ambient | Mounted on Large Heat Sink | 80 | °C/W | ||
| Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) | ||||||
| (BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250μA | -30 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=-30V, VGS=0V, TA=25°C | -1 | μA | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=-24V, VGS=0V, TA=125°C | -100 | μA | ||
| IGSS | Gate-Body Leakage Current | VGS=±20V, VDS=0V | ±100 | nA | ||
| VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID=-250μA | -1.2 | -1.6 | -2.5 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=-10V, ID=-4A | 43 | 55 | mΩ | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=-4.5V, ID=-3A | 66 | 80 | mΩ | |
| Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) | ||||||
| Ciss | Input Capacitance | VDS=-15V, VGS=0V, f=1MHz | 493 | pF | ||
| Coss | Output Capacitance | 65 | pF | |||
| Crss | Reverse Transfer Capacitance | 44 | pF | |||
| Qg | Total Gate Charge | VDS=-15V, ID=-4A, VGS=-10V | 8.2 | nC | ||
| Qgs | Gate Source Charge | 0.8 | nC | |||
| Qgd | Gate Drain Charge | 2.7 | nC | |||
| Switching Characteristics @ TJ = 25°C (unless otherwise stated) | ||||||
| td(on) | Turn on Delay Time | VDD=-15V, ID=-1A, RG=3.3Ω, VGS=-10V | 7.2 | ns | ||
| tr | Turn on Rise Time | 4.8 | ns | |||
| td(off) | Turn Off Delay Time | 25 | ns | |||
| tf | Turn Off Fall Time | 8.5 | ns | |||
| Source Drain Diode Characteristics | ||||||
| ISD | Source drain current (Body Diode) | TA=25°C | -2 | A | ||
| VSD | Forward on voltage | Tj=25°C, ISD=-4A, VGS=0V | -0.88 | -1.2 | V | |
2410121637_LGE-3407_C27975295.pdf
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