TRIAC Semiconductor Device KY BTB26-800B with 25A RMS On State Current and 800V Peak Voltage
Key Attributes
Model Number:
BTB26-800B
Product Custom Attributes
Holding Current (Ih):
80mA
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
26A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
300A
SCR Type:
1 TRIAC
Gate Trigger Voltage (Vgt):
1.5V
Operating Temperature:
-40℃~+150℃
Mfr. Part #:
BTB26-800B
Package:
TO-263
Product Description
BTA/BTB26 Series TRIACs
The BTA/BTB26 Series TRIACs from ShenZhenHanKingyuan Electronic are high-performance semiconductor devices designed for AC power control applications. Available in 3-quadrant and 4-quadrant configurations, these TRIACs offer a high RMS on-state current of 25A and repetitive peak off-state voltages up to 1000V. They are suitable for various applications including washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: ShenZhenHanKingyuan Electronic
- Product Series: BTA/BTB26 Series
- Type: TRIAC
- Quadrants: 3 Quadrants, 4 Quadrants
- Origin: Shenzhen
- Trademark: KY logo is a registered trademark of Shenzhen HanKingyuan Electronic
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit | BTA26-800 | BTA26-1000 |
| Repetitive Peak Off-State Voltage | VDRM / VRRM | 800 / 1000 | V | ✔ | ✔ | |
| R.M.S On-State Current | IT(RMS) | Tc=110C | 25 | A | ✔ | ✔ |
| Surge On-State Current | ITSM | tp=10ms | 280/300 | A | ✔ | ✔ |
| It for fusing | It | tp=10ms | 520 | As | ✔ | ✔ |
| Average Gate Power Dissipation | PG(AV) | Tj=125C | 1 | W | ✔ | ✔ |
| Peak Gate Current | IGM | Tj=125C | 6 | A | ✔ | ✔ |
| Operating Junction Temperature | Tj | -40~125 | C | ✔ | ✔ | |
| Storage Temperature | TSTG | -40~150 | C | ✔ | ✔ | |
| Forward "on" voltage | VTM | IT=35A tp=380us | 1.55 | V | ✔ | ✔ |
| Gate trigger voltage | VGT | VD=12V ,RL=30 | 1.5 | V | ✔ | ✔ |
| Gate trigger current | IGT | VD=12V RL=30 | 35 / 50 / 50 / 100 | mA | ✔ | ✔ |
| Holding current | IH | IT=0.2A | 60 / 80 / 80 | mA | ✔ | ✔ |
| Critical rate of rise of on- state current | di/dt | I,II,III F=120Hz,Tj=125C IG=2xIGT,tr100ns | 50 / 10 | A/us | ✔ | ✔ |
| Critical-rate of rise of commutation voltage | dv/dt | TJ=125C VD=2/3VDRM Gate | 400 / 1000 / 500 | V/us | ✔ | ✔ |
| Thermal resistance Junction to case | Rth(j-c) | 1.1 | C/W | ✔ | ✔ | |
| Thermal resistance Junction to ambient | Rth(j-a) | 50 | C/W | ✔ | ✔ | |
| Repetitive Peak Off-State Current | IDRM | Tj=25C / Tj=125C | 5 uA / 3 mA | ✔ | ✔ | |
| Repetitive Peak Reverse Current | IRRM | Tj=25C / Tj=125C | 5 uA / 3 mA | ✔ | ✔ |
2410121317_KY-BTB26-800B_C5366677.pdf
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