Silicon Controlled Rectifier KY BT151-600R Standard SCR with 12A On State Current and 600V Peak Voltage

Key Attributes
Model Number: BT151-600R
Product Custom Attributes
Holding Current (Ih):
30mA
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
12A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
120A
SCR Type:
1 SCR
Gate Trigger Voltage (Vgt):
1V
Operating Temperature:
-40℃~+125℃
Mfr. Part #:
BT151-600R
Package:
TO-252
Product Description

ShenZhenHanKingyuan Electronic BT151 Series 12A SCRs - Standard SCRs

The BT151 Series SCRs from ShenZhenHanKingyuan Electronic are standard 12A Silicon Controlled Rectifiers designed for a wide range of applications. These sensitive gate SCRs offer reliable performance with key features such as a 1V gate trigger voltage and repetitive peak off-state voltages of 600V and 800V. They are suitable for use in washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.

Product Attributes

  • Brand: ShenZhenHanKingyuan Electronic
  • Origin: Shenzhen
  • Product Series: BT151 Series
  • Product Type: Standard SCRs
  • Gate Sensitivity: Sensitive Gate

Technical Specifications

ParameterConditionsBT151 (600V)BT151 (800V)Unit
Absolute Maximum Ratings
VDRM/VRRM (Repetitive Peak Off-State Voltage)600800V
IT(RMS) (R.M.S On-State Current)Tc=105C12A
IT(AV) (On-state average current)TC=105C7.5A
ITSM (Surge On-State Current)Tp=10ms/tp=8.3ms120/132A
It (It for fusing)Tp=10ms75As
PGM (Peak Gate Power Dissipation)Tj=125C2W
PG(AV) (Average Gate Power Dissipation)Tj=125C0.5W
Tj (Operating Junction Temperature)-40~125C
TSTG (Storage Temperature)-40~150C
Electrical Characteristics
IDRM (Repetitive Peak Off-State Current)Tc=25C10uA
IDRM (Repetitive Peak Off-State Current)Tc=125C1mA
IRRM (Repetitive Peak Reverse Current)Tc=25C10uA
IRRM (Repetitive Peak Reverse Current)Tc=125C1mA
VTM (Forward "on" voltage)IT=23A, tp=380us1.7V
VGT (Gate trigger voltage)VD=12V ,RL=301.0V
di/dt (Critical rate of rise of on-state current)Tj=125C, IG=2xIGT, tr100ns50A/us
IGT (Gate trigger current)VD=12V, IT=0.1A20mA
IL (Latching current)IG=1.2IGT40mA
IH (Holding current)IT=0.1A30mA
VGD (Gate non-trigger voltage)VD=VDRM, TJ=125C,RL=3.3K,RGK=1K0.25V
dv/dt (Critical-rate of rise of commutation voltage)TJ=125C, VD=2/3VDRM, Gate open circuit200V/us
Rth(j-c) (Thermal resistance Junction to case)1C/W
Rth(j-a) (Thermal resistance Junction to ambient)50C/W

2410121306_KY-BT151-600R_C2831673.pdf

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