High stability NPN transistor LangJie MMBTA56 with SOT23 package and 225mW power dissipation rating

Key Attributes
Model Number: MMBTA56
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
50MHz
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
80V
Mfr. Part #:
MMBTA56
Package:
SOT-23
Product Description

Product Overview

The MMBTA56 is a complementary NPN transistor in a SOT-23 package, designed for applications requiring high stability and reliability. It offers a power dissipation of 225mW and is complementary to the MMBTA06.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Plastic-Encapsulated
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolTest ConditionValueUnit
Collector-Base VoltageVCBO-80V
Collector-Emitter VoltageVCEO-80V
Emitter-Base VoltageVEBO-4V
Collector Current-ContinuousIC-500mA
Collector Power DissipationPC225mW
Junction TemperatureTj150
Storage TemperatureTstg-55-+150
Thermal resistance Junction to AmbientRJA555/W
Collector-base breakdown voltageV(BR)CBOIC=-100uA, IE=0-80V
Collector-emitter breakdown voltageV(BR)CEOIC=-1mA,IB=0-80V
Emitter-base breakdown voltageV(BR)EBOIE=-100uA, IC=0-4V
Collector cut-off currentICBOVCB=-80V,IE=0-100nA
Emitter cut-off currentIEBOVEB=-4V,IC=0-100nA
Collector cut-off currentICE0VCE=-60V,IB=0-1.0uA
DC current gainhFE(1)VCE=-1V, IC=-10mA100-400
DC current gainhFE(2)VCE=-1V, IC=-100mA100
Collector-emitter saturation voltageVCE(sat)IC=-100mA, IB=-10mA-0.25V
Base-emitter voltageVBEVCE=-1V, IC=-100mA-1.20V
Transition frequencyfTVCE=-1V, IC=-100mA,f=100MHz50MHz

2409302232_LangJie-MMBTA56_C18195366.pdf

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