Plastic encapsulated LangJie MMBT3904 NPN transistor in SOT23 package for general purpose applications

Key Attributes
Model Number: MMBT3904
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3904
Package:
SOT-23
Product Description

MMBT3904 SOT-23 Plastic-Encapsulate Transistors

The MMBT3904 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It is complementary to the MMBT3906 and offers reliable performance with its plastic encapsulation.

Product Attributes

  • Type: NPN Transistor
  • Complementary to: MMBT3906
  • Package: SOT-23
  • Marking: 1AM

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-Base Breakdown VoltageV(BR)CBOIC=10A, IE=060V
Collector-Emitter Breakdown VoltageV(BR)CEOIC=1mA, IB=040V
Emitter-Base Breakdown VoltageV(BR)EBOIE=10A, IC=06V
Collector Cut-off CurrentICEXVCE=30V, VEB(off)=3V50nA
Collector Cut-off CurrentICBOVCB=60V, IE=0100nA
Emitter Cut-off CurrentIEBOVEB=5V, IC=0100nA
DC Current GainhFE(1)VCE=1V, IC=10mA100300
hFE(2)VCE=1V, IC=50mA60
hFE(3)VCE=1V, IC=100mA30
Collector-Emitter Saturation VoltageVCE(sat)IC=50mA, IB=5mA0.3V
Base-Emitter Saturation VoltageVBE(sat)IC=50mA, IB=5mA0.95V
Transition FrequencyfTVCE=20V,IC=10mA, f=100MHz300MHz
Delay TimetdVCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA35ns
Rise TimetrVCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA35ns
Storage TimetsVCC=3V, IC=10mA, IB1= IB2=1mA200ns
Fall TimetfVCC=3V, IC=10mA, IB1= IB2=1mA50ns
Collector Power DissipationPD(Ta=25)0.2W
Thermal Resistance Junction to AmbientRJA625/W
Junction Temperature (MAX.)Tj150
Storage TemperatureTstg-55+150

hFE Classification

RANKHFE Range
L100200
H200300

2410121928_LangJie-MMBT3904_C18195365.pdf

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