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quality Single phase high voltage IPM LINKOSEMI LKS1D5007DT optimized for BLDC and PMSM motor control circuits factory
quality Single phase high voltage IPM LINKOSEMI LKS1D5007DT optimized for BLDC and PMSM motor control circuits factory

Single phase high voltage IPM LINKOSEMI LKS1D5007DT optimized for BLDC and PMSM motor control circuits

Key Attributes
Model Number: LKS1D5007DT
Product Custom Attributes
High-side Bias Voltage(Vbs):
12V~18V
Operating Temperature:
-40℃~+150℃
Voltage - Isolation:
-
Frequency - Switching:
20kHz
Mfr. Part #:
LKS1D5007DT
Package:
ESOP-13
Product Description

Product Overview

LKS1D5007DT is a high-voltage single-phase IPM (Intelligent Power Module) integrating a high-voltage IC and high-performance MOSFETs. It is suitable for Brushless DC (BLDC) and Permanent Magnet Synchronous Motors (PMSM). The source of the low-side MOSFET can be used for current sampling. The input includes a Schmitt trigger and is compatible with 3.3V/5V/15V logic levels. The LKS1D5007DT utilizes an ESOP13 package.

Product Attributes

  • Brand: LKS (implied by www.lksmcu.com)
  • Origin: China (implied by www.bpsemi.com and the document language)
  • Package: ESOP13

Technical Specifications

ParameterConditionMinTypicalMaxUnitNotes
Absolute Maximum Ratings (Note 1) (Unless otherwise specified, TA=25)
VCCControl side supply voltage (VCC and COM terminals)20V
VBSHigh side bias voltage (VB and VS terminals)20V
VINInput signal voltage (VIN and COM terminals)-0.3VCC+0.3V
Inverter Section
VDSSMOSFET Drain-Source Voltage (IDSS=250uA)500V
IDMOSFET Continuous Operating Current (Note 2)7ATC=25
IDMOSFET Continuous Operating Current (Note 2)TBDATC=100
PDMaximum Power Dissipation (Single MOSFET, TC=100)TBDW
Control Section
VIN(ON)Input Turn-on Voltage Threshold (VIN and COM terminals)3.0VCCV
VIN(OFF)Input Turn-off Voltage Threshold (VIN and COM terminals)00.4V
Recommended Operating Conditions (Note 3) (Unless otherwise specified, TA=25)
VPNPower Section Supply Voltage (Between PN terminals)300400V
VCCControl Section Supply Voltage (VCC and COM terminals)12.015.018.0V
VBSHigh Side Bias Voltage (VB and VS terminals)12.015.018.0V
TDEADDead Time to Prevent Bridge Arm Shoot-through (Note 4)1.0--usVCC = VBS = 12.0 ~ 18.0V, TJ <150C
FPWMPWM Switching Frequency-20-KHzTJ <150C
Electrical Characteristics (Note 5) (Unless otherwise specified, TA=25)
BVDSSMOSFET Drain-Source Breakdown Voltage (VIN = 0 V, ID = 250 uA)500V
IDSSMOSFET Cut-off Current (VIN = 0 V, VDS = 500 V)10uA
VSDBody Diode Forward Voltage (VCC = VBS = 15V, VIN = 0 V, ID = -7 A)1.5V
RDS(ON)MOSFET On-Resistance (VCC = VBS = 15 V, VIN = 5 V, ID =0.5 A)1.1ohm
TONSwitching Time (Inductive Load L = 2.8 mH, VPN =400 V, VCC = VBS = 15 V, ID =7A, VIN = 0~5 V)960nsHigh side and low side MOSFET turn-on
TOFFSwitching Time (Inductive Load L = 2.8 mH, VPN =400 V, VCC = VBS = 15 V, ID =7A, VIN = 0~5 V)310nsHigh side and low side MOSFET turn-off
IQCCQuiescent VCC Supply Current (VCC = 15V, VIN = 0V)180uA
ISWIPM Operating VCC Supply Current (VCC=15V, VIN=15KHz)1.26mA
IQBQuiescent VBS Supply Current (VBS = 15V, VIN = 0V)50uA
VCC_ONVCC and VBS Rising Undervoltage Protection8.9V
VBS_ONVCC and VBS Rising Undervoltage Protection8.7V
VCC_UVLOVCC and VBS Falling Undervoltage Protection8.1V
VBS_UVLOVCC and VBS Falling Undervoltage Protection7.8V
VIHTurn-on Voltage Threshold (Logic High Level)2.9V
VILTurn-off Voltage Threshold (Logic Low Level)0.45V
VFBBootstrap Diode Forward Voltage (IF = 0.8A)1.65V
TRRBBootstrap Diode Reverse Recovery Time (IF = 0.5A)40ns

2402210951_LINKOSEMI-LKS1D5007DT_C20618099.pdf

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