Standard SCR KY BT151-600R silicon controlled rectifier for power switching in various AC control devices
Key Attributes
Model Number:
BT151-600R
Product Custom Attributes
Current - Gate Trigger(Igt):
30mA
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
12A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
120A
SCR Type:
1 SCR
Gate Trigger Voltage (Vgt):
1V
Operating Temperature:
-40℃~+125℃
Mfr. Part #:
BT151-600R
Package:
TO-252
Product Description
ShenZhenHanKingyuan Electronic CO.,Ltd BT151 Series 12A SCRs Standard SCRs
The BT151 Series Standard SCRs from ShenZhenHanKingyuan Electronic CO.,Ltd are high-performance silicon-controlled rectifiers designed for a wide range of AC power control applications. These sensitive gate SCRs are suitable for use in washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation, offering reliable and efficient power switching.
Product Attributes
- Brand: ShenZhenHanKingyuan Electronic CO.,Ltd
- Product Series: BT151 Series
- Type: Standard SCRs, Sensitive Gate SCR
- Origin: Shenzhen, China
- Trademark: KY logo is a registered trademark
Technical Specifications
| Parameter | Conditions | BT151 (600V) | BT151 (800V) | Unit |
| VDRM / VRRM (Repetitive Peak Off-State Voltage) | 600 | 800 | V | |
| IT(RMS) (R.M.S On-State Current) | Tc=105C | 12 | 12 | A |
| IT(AV) (On-state average current) | TC=105C | 7.5 | 7.5 | A |
| ITSM (Surge On-State Current) | Tp=10ms/tp=8.3ms | 120/132 | 120/132 | A |
| It (It for fusing) | Tp=10ms | 75 | 75 | As |
| PGM (Peak Gate Power Dissipation) | Tj=125C | 2 | 2 | W |
| PG(AV) (Average Gate Power Dissipation) | Tj=125C | 0.5 | 0.5 | W |
| Tj (Operating Junction Temperature) | -40~125 | -40~125 | C | |
| TSTG (Storage Temperature) | -40~150 | -40~150 | C | |
| IDRM (Repetitive Peak Off-State Current) | Tc=25C | 10 | 10 | uA |
| IDRM (Repetitive Peak Off-State Current) | Tc=125C | 1 | 1 | mA |
| IRRM (Repetitive Peak Reverse Current) | Tc=25C | 10 | 10 | uA |
| IRRM (Repetitive Peak Reverse Current) | Tc=125C | 1 | 1 | mA |
| VTM (Forward "on" voltage) | IT=23A, tp=380us | 1.7 | 1.7 | V |
| VGT (Gate trigger voltage) | VD=12V ,RL=30 | 1.0 | 1.0 | V |
| di/dt (Critical rate of rise of on-state current) | Tj=125C, IG=2xIGT, tr100ns | 50 | 50 | A/us |
| IGT (Gate trigger current) | VD=12V, IT=0.1A | 20 | 20 | mA |
| IL (Latching current) | IG=1.2IGT | 40 | 40 | mA |
| IH (Holding current) | IT=0.1A | 30 | 30 | mA |
| VGD (Gate non-trigger voltage) | VD=VDRM, TJ=125C,RL=3.3K,RGK=1K | 0.25 | 0.25 | V |
| dv/dt (Critical-rate of rise of commutation voltage) | TJ=125C, VD=2/3VDRM, Gate open circuit | 200 | 200 | V/us |
| Rth(j-c) (Thermal resistance Junction to case) | 1 | 1 | C/W | |
| Rth(j-a) (Thermal resistance Junction to ambient) | 50 | 50 | C/W |
Package Mechanical Data
TO-220C
| Ref | Millimeters Min. | Millimeters Typ. | Millimeters Max. | Inches Min. | Inches Typ. | Inches Max. |
| A | 4.40 | 4.60 | 0.173 | 0.181 | ||
| B | 0.70 | 0.90 | 0.028 | 0.035 | ||
| C | 0.45 | 0.60 | 0.018 | 0.024 | ||
| C2 | 1.23 | 1.32 | 0.048 | 0.052 | ||
| C3 | 2.20 | 2.60 | 0.087 | 0.102 | ||
| D | 9.90 | 10.3 | 0.390 | 0.406 | ||
| E | 28.0 | 29.8 | 1.102 | 1.173 | ||
| F | 1.14 | 1.70 | 0.045 | 0.067 | ||
| G | 8.90 | 9.90 | 0.350 | 0.390 | ||
| H | 2.54 | 0.1 | ||||
| L1 | 6.30 | 6.90 | 0.248 | 0.272 | ||
| L2 | 2.65 | 2.95 | 0.104 | 0.116 | ||
| L3 | 3.6 | 0.142 |
TO-251
| Ref | Millimeters Min. | Millimeters Typ. | Millimeters Max. | Inches Min. | Inches Typ. | Inches Max. |
| A | 2.20 | 2.40 | 0.086 | 0.095 | ||
| A2 | 0.90 | 1.20 | 0.035 | 0.047 | ||
| B | 0.55 | 0.65 | 0.022 | 0.026 | ||
| B2 | 5.10 | 5.40 | 0.200 | 0.213 | ||
| B3 | 0.76 | 0.85 | 0.030 | 0.033 | ||
| C | 4.40 | 4.70 | 0.173 | 0.185 | ||
| C2 | 2.70 | 2.90 | 0.106 | 0.114 | ||
| D | 6.40 | 6.70 | 0.252 | 0.264 | ||
| E | 16.0 | 17.0 | 0.630 | 0.669 | ||
| G | 8.90 | 9.40 | 0.350 | 0.370 | ||
| H | 0.45 | 0.62 | 0.018 | 0.024 | ||
| L | 2.30 | 0.091 | ||||
| L1 | 6.00 | 6.20 | 0.236 | 0.244 | ||
| L2 | 1.80 | 1.90 | 0.071 | 0.075 | ||
| V1 | 1.37 | 1.50 | 0.054 | 0.059 |
TO-252
| Ref | Millimeters Min. | Millimeters Typ. | Millimeters Max. | Inches Min. | Inches Typ. | Inches Max. |
| A | 2.20 | 2.40 | 0.086 | 0.095 | ||
| A2 | 0.03 | 0.23 | 0.001 | 0.009 | ||
| B | 0.55 | 0.65 | 0.022 | 0.026 | ||
| B2 | 5.10 | 5.40 | 0.200 | 0.213 | ||
| C | 0.45 | 0.55 | 0.018 | 0.022 | ||
| D | 6.40 | 6.70 | 0.252 | 0.264 | ||
| E | 9.35 | 10.6 | 0.368 | 0.417 | ||
| E1 | 1.30 | 1.70 | 0.051 | 0.067 | ||
| G | 4.40 | 4.70 | 0.173 | 0.185 | ||
| H | 2.70 | 2.90 | 0.106 | 0.114 | ||
| L1 | 6.00 | 6.20 | 0.236 | 0.244 | ||
| L2 | 1.37 | 1.50 | 0.054 | 0.059 | ||
| L3 | 0.8 | 0.031 | ||||
| L4 | 0.8 | 0.031 | ||||
| V1 | 0 | 4 | 0 | 4 | ||
| V2 | 0 | 8 | 0 | 8 |
TO-263
| Ref | Millimeters Min. | Millimeters Typ. | Millimeters Max. | Inches Min. | Inches Typ. | Inches Max. |
| A | 2.20 | 2.40 | 0.086 | 0.095 | ||
| A2 | 0.03 | 0.23 | 0.001 | 0.009 | ||
| B | 0.55 | 0.65 | 0.022 | 0.026 | ||
| B2 | 5.10 | 5.40 | 0.200 | 0.213 | ||
| C | 0.45 | 0.55 | 0.018 | 0.022 | ||
| C2 | 2.70 | 2.90 | 0.106 | 0.114 | ||
| D | 6.40 | 6.70 | 0.252 | 0.264 | ||
| D1 | 1.30 | 1.70 | 0.051 | 0.067 | ||
| E | 9.35 | 10.6 | 0.368 | 0.417 | ||
| E1 | 1.37 | 1.50 | 0.054 | 0.059 | ||
| G | 4.40 | 4.70 | 0.173 | 0.185 | ||
| H | 6.00 | 6.20 | 0.236 | 0.244 | ||
| L1 | 1.80 | 1.90 | 0.071 | 0.075 | ||
| L2 | 0.8 | 0.031 | ||||
| V1 | 0 | 4 | 0 | 4 | ||
| V2 | 0 | 8 | 0 | 8 |
2410311002_KY-BT151-600R_C7420882.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
