IXFH12N100P Power MOSFET Offering Low RDSon and High Avalanche Rating for Switch Mode Power Supplies
Key Attributes
Model Number:
IXFH12N100P
Product Custom Attributes
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
12A
RDS(on):
1.05Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
6.5V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF
Input Capacitance(Ciss):
4.08nF
Pd - Power Dissipation:
463W
Output Capacitance(Coss):
246pF
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
IXFH12N100P
Package:
TO-247
Product Description
Product Overview
The IXFH12N100P, IXFV12N100P, and IXFV12N100PS are N-Channel Enhancement Mode Power MOSFETs featuring low RDS(on) and QG, avalanche rating, and low package inductance. These PolarTM HiPerFETTM devices offer high power density, easy mounting, and space savings, making them suitable for switch-mode and resonant-mode power supplies, DC-DC converters, laser drivers, AC/DC motor drives, and robotics.
Product Attributes
- Brand: IXYS
- Origin: USA (implied by patents and copyright)
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Part Number | VDSS (V) | ID25 (A) | RDS(on) () | trr (ns) | BVDSS (V) | VGS(th) (V) | IGSS (nA) | IDSS (A) | gfs (S) | RGi () | Ciss (pF) | Coss (pF) | Crss (pF) | td(on) (ns) | tr (ns) | td(off) (ns) | tf (ns) | Qg(on) (nC) | Qgs (nC) | Qg (nC) | RthJC (C/W) | RthCS (C/W) | IS (A) | ISM (A) | VSD (V) | QRM (C) | IRM (A) |
| IXFH12N100P IXFV12N100P IXFV12N100PS | 1000 | 12 | 1.05 | 300 | 1000 | 3.5 - 6.5 | 100 | 20 (TJ=125C: 1000) | 4.8 - 8.8 | 1.9 | 4080 | 246 | 40 | 30 | 25 | 60 | 36 | 80 | 24 | 35 | 0.27 | 0.25 | 12 | 48 | 1.5 | 0.8 | 7.9 |
2412111336_Littelfuse-IXFH12N100P_C6884332.pdf
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