Durable rectifier diode LangJie HER1008 designed for high surge current and dissipation in converters
Key Attributes
Model Number:
HER1008
Product Custom Attributes
Reverse Leakage Current (Ir):
10uA
Non-Repetitive Peak Forward Surge Current:
125A
Reverse Recovery Time (trr):
80ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
1kV
Voltage - Forward(Vf@If):
1.7V@5A
Current - Rectified:
10A
Mfr. Part #:
HER1008
Package:
TO-220
Product Description
Product Overview
The HER1001G HER1008G series are high-efficiency rectifiers offering low forward voltage (VF), high current capability, and high surge current capability. These devices are designed for applications such as DC to DC converters, switching mode converters and inverters, and freewheeling applications, providing low power loss. AEC-Q101 qualified versions are available.
Product Attributes
- Certifications: AEC-Q101 qualified available, RoHS Compliant, Halogen-free according to IEC 61249-2-21
- Case: TO-220
- Molding compound meets UL 94V-0 flammability rating
- Terminal: Matte tin plated leads, solderable per J-STD-002
- Meet JESD 201 class 2 whisker test
Technical Specifications
| Parameter | Symbol | HER1001G | HER1002G | HER1003G | HER1004G | HER1005G | HER1006G | HER1007G | HER1008G | Unit |
| Repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 300 | 400 | 600 | 800 | 1000 | V |
| Reverse voltage, total rms value | VR(RMS) | 35 | 70 | 140 | 210 | 280 | 420 | 560 | 700 | V |
| Forward current | IF | 10 | A | |||||||
| Surge peak forward current, 8.3ms single half sine wave | IFSM | 125 | A | |||||||
| Junction temperature | TJ | -55 to +150 | C | |||||||
| Storage temperature | TSTG | -55 to +150 | C | |||||||
| Junction-to-case thermal resistance | RJC | 1.5 | C/W | |||||||
| Forward voltage per diode (IF = 5A, TJ = 25C) | VF | - 1.0 | - 1.0 | - 1.0 | - 1.0 | - 1.3 | - 1.7 | - 1.7 | - 1.7 | V |
| Reverse current @ rated VR (TJ = 25C) | IR | 10 | A | |||||||
| Reverse current @ rated VR (TJ = 125C) | IR | 400 | A | |||||||
| Junction capacitance per diode (1MHz, VR = 4.0V) | CJ | 60 | 60 | 60 | 60 | 60 | 40 | 40 | 40 | pF |
| Reverse recovery time (IF = 0.5A, IR = 1.0A, Irr = 0.25A) | trr | - 50 | - 50 | - 50 | - 50 | - 50 | - 80 | - 80 | - 80 | ns |
2410121442_LangJie-HER1008_C18195399.pdf
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