N Channel MOSFET Littelfuse IXFP5N100P with avalanche rated diode and low drain to tab capacitance
Key Attributes
Model Number:
IXFP5N100P
Product Custom Attributes
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
5A
RDS(on):
2.8Ω@10V,0.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
113pF@25V
Input Capacitance(Ciss):
1.83nF@20V
Pd - Power Dissipation:
250W
Gate Charge(Qg):
33.4nC@10V
Mfr. Part #:
IXFP5N100P
Package:
TO-220
Product Description
Product Overview
The IXFA5N100P, IXFH5N100P, and IXFP5N100P are PolarTM Power MOSFETs and HiPerFETTM N-Channel Enhancement Mode devices from IXYS, designed for high-speed power switching applications. These devices feature an avalanche-rated fast intrinsic diode, low RDS(ON) with a rugged PolarTM process, low QG, and low drain-to-tab capacitance. They are available in international standard packages, offering easy mounting and space savings.
Product Attributes
- Brand: IXYS
- Technology: PolarTM Power MOSFET, HiPerFETTM
- Channel Type: N-Channel Enhancement Mode
- Diode: Fast Intrinsic Diode, Avalanche Rated
- Certifications: Covered by U.S. patents (listed in source text)
Technical Specifications
| Symbol | Test Conditions | Min. | Typ. | Max. | Units | Notes |
| Maximum Ratings | ||||||
| VDSS | TJ = 25C to 150C | 1000 | V | |||
| VDGR | TJ = 25C to 150C, RGS = 1M | 1000 | V | |||
| VGSS | Continuous | 30 | V | |||
| VGSM | Transient | 40 | V | |||
| ID25 | TC = 25C | 5 | A | |||
| IDM | TC = 25C, pulse width limited by TJM | 10 | A | |||
| IA | TC = 25C | 5 | A | |||
| EAS | TC = 25C | 300 | mJ | |||
| dV/dt | IS IDM, VDD VDSS, TJ 150C | 10 | V/ns | |||
| PD | TC = 25C | 250 | W | |||
| TJ | -55 | +150 | C | |||
| TJM | 150 | C | ||||
| Tstg | -55 | +150 | C | |||
| TL | 1.6mm (0.062) from case for 10s | 300 | C | |||
| TSOLD | Plastic body for 10s | 260 | C | |||
| Md | Mounting torque (TO-220,TO-247) | 1.13 / 10 | Nm/lb.in. | |||
| Weight | TO-263 | 2.5 | g | |||
| Weight | TO-220 | 3.0 | g | |||
| Weight | TO-247 | 6.0 | g | |||
| Characteristic Values (TJ = 25C, unless otherwise specified) | ||||||
| BVDSS | VGS = 0V, ID = 250A | 1000 | V | |||
| VGS(th) | VDS = VGS, ID = 250A | 3.0 | 6.0 | V | ||
| IGSS | VGS = 30V, VDS = 0V | 100 | nA | |||
| IDSS | VDS = VDSS, VGS = 0V | 10 | A | TJ = 125C: 750 A | ||
| RDS(on) | VGS = 10V, ID = 0.5 ID25, Note 1 | 2.8 | ||||
| gfs | VDS= 20V, ID = 0.5 ID25, Note 1 | 2.4 | 4.0 | S | ||
| RGi | Gate input resistance | 1.6 | ||||
| Ciss | VGS = 0V, VDS = 25V, f = 1MHz | 1830 | pF | |||
| Coss | VGS = 0V, VDS = 25V, f = 1MHz | 113 | pF | |||
| Crss | VGS = 0V, VDS = 25V, f = 1MHz | 20 | pF | |||
| td(on) | Resistive Switching Times, VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 5 (External) | 12 | ns | |||
| tr | Resistive Switching Times, VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 5 (External) | 13 | ns | |||
| td(off) | Resistive Switching Times, VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 5 (External) | 30 | ns | |||
| tf | Resistive Switching Times, VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 5 (External) | 37 | ns | |||
| Qg(on) | VGS= 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 33.4 | nC | |||
| Qgs | VGS= 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 10.6 | nC | |||
| Qgd | VGS= 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 14.4 | nC | |||
| RthJC | 0.50 | C/W | ||||
| RthCS | (TO-220) | 0.50 | C/W | |||
| RthCS | (TO-247) | 0.25 | C/W | |||
| Source-Drain Diode | ||||||
| IS | VGS = 0V | 5 | A | |||
| ISM | Repetitive, pulse width limited by TJM | 20 | A | |||
| VSD | IF = IS, VGS = 0V, Note 1 | 1.3 | V | |||
| trr | IF = 5A, VGS = 0V, -di/dt = 100A/s, VR = 100V | 200 | ns | |||
| IRM | IF = 5A, VGS = 0V, -di/dt = 100A/s, VR = 100V | 7.4 | A | |||
| QRM | IF = 5A, VGS = 0V, -di/dt = 100A/s, VR = 100V | 0.43 | C | |||
Applications
- DC-DC converters
- Battery chargers
- Switched-mode and resonant-mode power supplies
- Uninterrupted power supplies
- AC motor control
- High speed power switching applications
2410121341_Littelfuse-IXFP5N100P_C5773247.pdf
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